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Surface reaction of CF_2 radicals for fluorocarbon film formation in SiO_2/Si selective etching process
http://hdl.handle.net/2237/7101
http://hdl.handle.net/2237/7101a088b24d-df81-454b-a363-4d45990d8f96
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
JVA000233.pdf (121.0 kB)
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| アイテムタイプ | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2006-10-30 | |||||
| タイトル | ||||||
| タイトル | Surface reaction of CF_2 radicals for fluorocarbon film formation in SiO_2/Si selective etching process | |||||
| 言語 | en | |||||
| 著者 |
Inayoshi, Muneto
× Inayoshi, Muneto× Ito, Masafumi× Hori, Masaru× Goto, Toshio× Hiramatsu, Mineo |
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| アクセス権 | ||||||
| アクセス権 | open access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
| 権利 | ||||||
| 権利情報 | Copyright (1998) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
| 言語 | en | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The surface reaction of CF_2 radicals on Si and fluorocarbon films was investigated in electron cyclotron resonance (ECR) Ar and H_2 /Ar downstream plasmas employing CF_2 radical injection technique. The effects of Ar^+ ions, Ar^* metastable species and radiation from plasmas on the fluorocarbon film formation were evaluated in ECR Ar downstream plasma with CF_2 radical injection. As a result, CF_2 radicals with assistance of Ar+^ ion bombardment were found to play an important role in the fluorocarbon film formation. The adsorptive reactions of CF_2 radicals on the fluorocarbon film surface with and without Ar and H_2 /Ar plasma exposures were successfully investigated by in situ Fourier transform infrared reflection absorption spectroscopy and in situ x-ray photoelectron spectroscopy. It was found that the formation of fluorocarbon film in the plasma proceeded through the adsorptive reaction of CF_2 radicals at a high probability on the active sites formed by the bombardment of Ar^+ ions on the fluorocarbon film surface. | |||||
| 言語 | en | |||||
| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
| タイプ | journal article | |||||
| 出版タイプ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| DOI | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1116/1.580977 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 0734-2101 | |||||
| 書誌情報 |
en : Journal of Vacuum Science & Technology A 巻 16, 号 1, p. 233-238, 発行日 1998-01 |
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| フォーマット | ||||||
| 値 | application/pdf | |||||
| 著者版フラグ | ||||||
| 値 | publisher | |||||
| URI | ||||||
| 識別子 | http://hdl.handle.net/2237/7101 | |||||
| 識別子タイプ | HDL | |||||
