{"_buckets": {"deposit": "4fb59d40-0e19-47d0-bcb5-f495af63e662"}, "_deposit": {"id": "5495", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "5495"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00005495", "sets": ["322"]}, "author_link": ["14183", "14184", "14185", "14186", "14187"], "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "1998-01", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "1", "bibliographicPageEnd": "238", "bibliographicPageStart": "233", "bibliographicVolumeNumber": "16", "bibliographic_titles": [{"bibliographic_title": "Journal of Vacuum Science \u0026 Technology A", "bibliographic_titleLang": "en"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "The surface reaction of CF_2 radicals on Si and fluorocarbon films was investigated in electron cyclotron resonance (ECR) Ar and H_2 /Ar downstream plasmas employing CF_2 radical injection technique. The effects of Ar^+ ions, Ar^* metastable species and radiation from plasmas on the fluorocarbon film formation were evaluated in ECR Ar downstream plasma with CF_2 radical injection. As a result, CF_2 radicals with assistance of Ar+^ ion bombardment were found to play an important role in the fluorocarbon film formation. The adsorptive reactions of CF_2 radicals on the fluorocarbon film surface with and without Ar and H_2 /Ar plasma exposures were successfully investigated by in situ Fourier transform infrared reflection absorption spectroscopy and in situ x-ray photoelectron spectroscopy. It was found that the formation of fluorocarbon film in the plasma proceeded through the adsorptive reaction of CF_2 radicals at a high probability on the active sites formed by the bombardment of Ar^+ ions on the fluorocarbon film surface.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/7101"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics", "subitem_publisher_language": "en"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1116/1.580977", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright (1998) American Institute of Physics. This article may be downloaded for personal use only. 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