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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Formation of silicon nitride gate dielectric films at 300 ℃ employing radical chemical vapor deposition

http://hdl.handle.net/2237/7102
http://hdl.handle.net/2237/7102
b217868e-20ed-440e-ac64-9bb1424936c9
名前 / ファイル ライセンス アクション
JVB002486.pdf JVB002486.pdf (498.9 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2006-10-30
タイトル
タイトル Formation of silicon nitride gate dielectric films at 300 ℃ employing radical chemical vapor deposition
言語 en
著者 Ohta, Hiroyuki

× Ohta, Hiroyuki

WEKO 14188

en Ohta, Hiroyuki

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Nagashima, Atsushi

× Nagashima, Atsushi

WEKO 14189

en Nagashima, Atsushi

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Ito, Masafumi

× Ito, Masafumi

WEKO 14190

en Ito, Masafumi

Search repository
Hori, Masaru

× Hori, Masaru

WEKO 14191

en Hori, Masaru

Search repository
Goto, Toshio

× Goto, Toshio

WEKO 14192

en Goto, Toshio

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
抄録
内容記述 Silicon nitride (SiN_x) ultrathin gate dielectric films for ultralarge-scale integrated circuits have been successfully formed by radical chemical vapor deposition (R-CVD) at 300 ℃. In this process, charged species incident on the silicon (Si) substrate during the growth were eliminated with the magnetic field in electron cyclotron resonance plasma-enhanced CVD employing nitrogen and silane (N_2 /SiH_4) gases. By using R-CVD, SiN_x films with very low leakage current and near-ideal dielectric constant (ε=7.2) have been obtained. In situ Fourier transform infrared reflection absorption spectroscopy (FT-IR RAS) has confirmed that the Si–N bonds are increased and the voids in films are reduced by eliminating charged species. A key factor for forming ultrathin SiN_x films of high quality at 300 ℃ is discussed, based on characterization of films synthesized with and without charged species on the substrate using in situ x-ray photoelectron spectroscopy, in situ FT-IR RAS, and in situ atomic force microscopy.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 American Institute of Physics
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1116/1.1289549
ISSN
収録物識別子タイプ PISSN
収録物識別子 1071-1023
書誌情報 en : Journal of Vacuum Science & Technology B

巻 18, 号 5, p. 2486-2490, 発行日 2000-09
フォーマット
application/pdf
著者版フラグ
値 publisher
URI
識別子 http://hdl.handle.net/2237/7102
識別子タイプ HDL
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