{"_buckets": {"deposit": "188d004b-e12a-46ee-93e4-95b17414b6c5"}, "_deposit": {"id": "5496", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "5496"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00005496", "sets": ["322"]}, "author_link": ["14188", "14189", "14190", "14191", "14192"], "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2000-09", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "5", "bibliographicPageEnd": "2490", "bibliographicPageStart": "2486", "bibliographicVolumeNumber": "18", "bibliographic_titles": [{"bibliographic_title": "Journal of Vacuum Science \u0026 Technology B", "bibliographic_titleLang": "en"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "Silicon nitride (SiN_x) ultrathin gate dielectric films for ultralarge-scale integrated circuits have been successfully formed by radical chemical vapor deposition (R-CVD) at 300 ℃. In this process, charged species incident on the silicon (Si) substrate during the growth were eliminated with the magnetic field in electron cyclotron resonance plasma-enhanced CVD employing nitrogen and silane (N_2 /SiH_4) gases. By using R-CVD, SiN_x films with very low leakage current and near-ideal dielectric constant (ε=7.2) have been obtained. In situ Fourier transform infrared reflection absorption spectroscopy (FT-IR RAS) has confirmed that the Si–N bonds are increased and the voids in films are reduced by eliminating charged species. A key factor for forming ultrathin SiN_x films of high quality at 300 ℃ is discussed, based on characterization of films synthesized with and without charged species on the substrate using in situ x-ray photoelectron spectroscopy, in situ FT-IR RAS, and in situ atomic force microscopy.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/7102"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics", "subitem_publisher_language": "en"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1116/1.1289549", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright (2000) American Institute of Physics. 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