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Formation of silicon nitride gate dielectric films at 300 ℃ employing radical chemical vapor deposition
http://hdl.handle.net/2237/7102
http://hdl.handle.net/2237/7102b217868e-20ed-440e-ac64-9bb1424936c9
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
JVB002486.pdf (498.9 kB)
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| アイテムタイプ | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2006-10-30 | |||||
| タイトル | ||||||
| タイトル | Formation of silicon nitride gate dielectric films at 300 ℃ employing radical chemical vapor deposition | |||||
| 言語 | en | |||||
| 著者 |
Ohta, Hiroyuki
× Ohta, Hiroyuki× Nagashima, Atsushi× Ito, Masafumi× Hori, Masaru× Goto, Toshio |
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| アクセス権 | ||||||
| アクセス権 | open access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
| 権利 | ||||||
| 権利情報 | Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
| 言語 | en | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Silicon nitride (SiN_x) ultrathin gate dielectric films for ultralarge-scale integrated circuits have been successfully formed by radical chemical vapor deposition (R-CVD) at 300 ℃. In this process, charged species incident on the silicon (Si) substrate during the growth were eliminated with the magnetic field in electron cyclotron resonance plasma-enhanced CVD employing nitrogen and silane (N_2 /SiH_4) gases. By using R-CVD, SiN_x films with very low leakage current and near-ideal dielectric constant (ε=7.2) have been obtained. In situ Fourier transform infrared reflection absorption spectroscopy (FT-IR RAS) has confirmed that the Si–N bonds are increased and the voids in films are reduced by eliminating charged species. A key factor for forming ultrathin SiN_x films of high quality at 300 ℃ is discussed, based on characterization of films synthesized with and without charged species on the substrate using in situ x-ray photoelectron spectroscopy, in situ FT-IR RAS, and in situ atomic force microscopy. | |||||
| 言語 | en | |||||
| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
| タイプ | journal article | |||||
| 出版タイプ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| DOI | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1116/1.1289549 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 1071-1023 | |||||
| 書誌情報 |
en : Journal of Vacuum Science & Technology B 巻 18, 号 5, p. 2486-2490, 発行日 2000-09 |
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| フォーマット | ||||||
| 値 | application/pdf | |||||
| 著者版フラグ | ||||||
| 値 | publisher | |||||
| URI | ||||||
| 識別子 | http://hdl.handle.net/2237/7102 | |||||
| 識別子タイプ | HDL | |||||
