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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Local structures and damage processes of electron irradiated α-SiC studied with transmission electron microscopy and electron energy-loss spectroscopy

http://hdl.handle.net/2237/7104
http://hdl.handle.net/2237/7104
bd34b720-7942-4d9f-86f5-c34319385089
名前 / ファイル ライセンス アクション
JApplPhys_93_3765.pdf JApplPhys_93_3765.pdf (1.1 MB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2006-11-07
タイトル
タイトル Local structures and damage processes of electron irradiated α-SiC studied with transmission electron microscopy and electron energy-loss spectroscopy
言語 en
著者 Muto, Shunsuke

× Muto, Shunsuke

WEKO 14197

en Muto, Shunsuke

Search repository
Tanabe, Tetsuo

× Tanabe, Tetsuo

WEKO 14198

en Tanabe, Tetsuo

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
抄録
内容記述 Damaged structures of α-SiC below and above the critical temperature of amorphization (T_c) under high-energy electron irradiation were studied by means of transmission electron microscopy and electron energy-loss spectroscopy. Above T_c , crystal fragmentation takes place due to local lattice strains caused by preferential displacements, subsequent outward diffusion of carbon atoms and formation of silicon nano-clusters. On the other hand, the amorphous structure formed below T_c can be well characterized by the formation of Si–Si, Si–C, and sp^3 C–C covalent bonds with the tetrahedral coordination locally retained and uniformly distributed. The primary amorphization process under electron irradiation can be interpreted by the defect-accumulation model, in which displaced atoms are frozen at interstitial sites before long-distance diffusion by reconstructing the surrounding structure to relax the local strains. Accordingly the amorphization process is controlled essentially by the mobility of displaced carbon and silicon atoms, and chemical disordering seems to play a minor role in triggering the amorphization. A key issue for irradiation induced volume swelling of amorphous SiC is also presented.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 American Institute of Physics
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1063/1.1555673
ISSN
収録物識別子タイプ PISSN
収録物識別子 00218979
書誌情報 en : Journal of Applied Physics

巻 93, 号 7, p. 3765-3775, 発行日 2003-04-01
フォーマット
application/pdf
著者版フラグ
値 publisher
URI
識別子 http://hdl.handle.net/2237/7104
識別子タイプ HDL
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