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Local structures and damage processes of electron irradiated α-SiC studied with transmission electron microscopy and electron energy-loss spectroscopy
http://hdl.handle.net/2237/7104
http://hdl.handle.net/2237/7104bd34b720-7942-4d9f-86f5-c34319385089
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
JApplPhys_93_3765.pdf (1.1 MB)
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| アイテムタイプ | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2006-11-07 | |||||
| タイトル | ||||||
| タイトル | Local structures and damage processes of electron irradiated α-SiC studied with transmission electron microscopy and electron energy-loss spectroscopy | |||||
| 言語 | en | |||||
| 著者 |
Muto, Shunsuke
× Muto, Shunsuke× Tanabe, Tetsuo |
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| アクセス権 | ||||||
| アクセス権 | open access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
| 権利 | ||||||
| 権利情報 | Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
| 言語 | en | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Damaged structures of α-SiC below and above the critical temperature of amorphization (T_c) under high-energy electron irradiation were studied by means of transmission electron microscopy and electron energy-loss spectroscopy. Above T_c , crystal fragmentation takes place due to local lattice strains caused by preferential displacements, subsequent outward diffusion of carbon atoms and formation of silicon nano-clusters. On the other hand, the amorphous structure formed below T_c can be well characterized by the formation of Si–Si, Si–C, and sp^3 C–C covalent bonds with the tetrahedral coordination locally retained and uniformly distributed. The primary amorphization process under electron irradiation can be interpreted by the defect-accumulation model, in which displaced atoms are frozen at interstitial sites before long-distance diffusion by reconstructing the surrounding structure to relax the local strains. Accordingly the amorphization process is controlled essentially by the mobility of displaced carbon and silicon atoms, and chemical disordering seems to play a minor role in triggering the amorphization. A key issue for irradiation induced volume swelling of amorphous SiC is also presented. | |||||
| 言語 | en | |||||
| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
| タイプ | journal article | |||||
| 出版タイプ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| DOI | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1063/1.1555673 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 00218979 | |||||
| 書誌情報 |
en : Journal of Applied Physics 巻 93, 号 7, p. 3765-3775, 発行日 2003-04-01 |
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| フォーマット | ||||||
| 値 | application/pdf | |||||
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| 値 | publisher | |||||
| URI | ||||||
| 識別子 | http://hdl.handle.net/2237/7104 | |||||
| 識別子タイプ | HDL | |||||
