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A Universal Parameter for Sillicon Anisotropic Etching In Alkaline Solutions
http://hdl.handle.net/2237/9537
http://hdl.handle.net/2237/9537731fe32c-1a03-4c7f-a2bb-b2e252b26f61
名前 / ファイル | ライセンス | アクション |
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shik_02.pdf (305.0 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2008-02-29 | |||||
タイトル | ||||||
タイトル | A Universal Parameter for Sillicon Anisotropic Etching In Alkaline Solutions | |||||
言語 | en | |||||
著者 |
Cheng, D.
× Cheng, D.× Gosálvez, M.A.× Shikida, M.× Sato, K. |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | Copyright © 2006 IEEE. Reprinted from (relevant publication info). This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Nagoya University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. | |||||
抄録 | ||||||
内容記述 | We propose a new explanation for the difference between the etching properties of potassium-hydroxide (KOH) and tetramethyl-ammonium-hydroxide (TMAH) by focusing on the volume fraction occupied by the corresponding cations, K+ for KOH and TMA+ (with molecular structure N(CH3)4+) for TMAH. We have found experimentally that the differences in the surface morphology of Si(111) after etching can be explained by considering the cation volume fraction and that this parameter can also be used to explain the changes in the etch rates between different etchants, or between different concentrations of the same etchant, suggesting a universal behavior for any etching system. This finding simplifies the understanding of the mechanism of silicon anisotropic etching. | |||||
言語 | en | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | IEEE | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
出版タイプ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1109/MEMSYS.2006.1627800 | |||||
ISBN | ||||||
関連タイプ | isPartOf | |||||
識別子タイプ | ISBN | |||||
関連識別子 | 0-7803-9475-5 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 1084-6999 | |||||
書誌情報 |
en : 19th IEEE International Conference on Micro Electro Mechanical Systems p. 318-321, 発行日 2006 |
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フォーマット | ||||||
application/pdf | ||||||
著者版フラグ | ||||||
値 | publisher | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/9537 | |||||
識別子タイプ | HDL |