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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

A Universal Parameter for Sillicon Anisotropic Etching In Alkaline Solutions

http://hdl.handle.net/2237/9537
http://hdl.handle.net/2237/9537
731fe32c-1a03-4c7f-a2bb-b2e252b26f61
名前 / ファイル ライセンス アクション
shik_02.pdf shik_02.pdf (305.0 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2008-02-29
タイトル
タイトル A Universal Parameter for Sillicon Anisotropic Etching In Alkaline Solutions
言語 en
著者 Cheng, D.

× Cheng, D.

WEKO 22253

en Cheng, D.

Search repository
Gosálvez, M.A.

× Gosálvez, M.A.

WEKO 22254

en Gosálvez, M.A.

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Shikida, M.

× Shikida, M.

WEKO 22255

en Shikida, M.

Search repository
Sato, K.

× Sato, K.

WEKO 22256

en Sato, K.

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 Copyright © 2006 IEEE. Reprinted from (relevant publication info). This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Nagoya University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org.
抄録
内容記述 We propose a new explanation for the difference between the etching properties of potassium-hydroxide (KOH) and tetramethyl-ammonium-hydroxide (TMAH) by focusing on the volume fraction occupied by the corresponding cations, K+ for KOH and TMA+ (with molecular structure N(CH3)4+) for TMAH. We have found experimentally that the differences in the surface morphology of Si(111) after etching can be explained by considering the cation volume fraction and that this parameter can also be used to explain the changes in the etch rates between different etchants, or between different concentrations of the same etchant, suggesting a universal behavior for any etching system. This finding simplifies the understanding of the mechanism of silicon anisotropic etching.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 IEEE
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1109/MEMSYS.2006.1627800
ISBN
関連タイプ isPartOf
識別子タイプ ISBN
関連識別子 0-7803-9475-5
ISSN
収録物識別子タイプ PISSN
収録物識別子 1084-6999
書誌情報 en : 19th IEEE International Conference on Micro Electro Mechanical Systems

p. 318-321, 発行日 2006
フォーマット
application/pdf
著者版フラグ
値 publisher
URI
識別子 http://hdl.handle.net/2237/9537
識別子タイプ HDL
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