{"_buckets": {"deposit": "f5554663-9469-46d5-a1d6-2616f7384649"}, "_deposit": {"id": "7847", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "7847"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00007847"}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2007", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "378", "bibliographicPageStart": "375", "bibliographic_titles": [{"bibliographic_title": "Solid-State Sensors, Actuators and Microsystems Conference"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "We developed a quasi-static tensile test system that controls environmental conditions, such as pressure, temperature, and surrounding gasses. Using this system, we evaluated the fracture properties of micron- and submicron-thick single-crystal-silicon film under several conditions. The strength of silicon measured in vacuum or helium was slightly higher than that in laboratory air. We measured the fracture toughness at different temperatures ranging from room temperature (RT) to 500\u00baC and found a brittle-to-ductile transition at 70\u00baC for micron-sized silicon film. The fracture toughness drastically increased at the transition temperature and saturated at a level of 2.5 MPa \u221a m , which is twice the value at RT. On the other hand, submicron-thick silicon was less brittle: its fracture toughness was already 2.7 MPa \u221am at RT.", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/9567"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "IEEE"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "http://dx.doi.org/10.1109/SENSOR.2007.4300146", "subitem_relation_type_select": "DOI"}}]}, "item_10_relation_8": {"attribute_name": "ISBN", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "1-4244-0842-3", "subitem_relation_type_select": "ISBN"}}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "Copyright \u00a9 2007 IEEE. Reprinted from (relevant publication info). This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Nagoya University\u2019s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org."}]}, "item_10_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_text_14": {"attribute_name": "\u30d5\u30a9\u30fc\u30de\u30c3\u30c8", "attribute_value_mlt": [{"subitem_text_value": "application/pdf"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Nakao, S."}], "nameIdentifiers": [{"nameIdentifier": "22405", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ando, T."}], "nameIdentifiers": [{"nameIdentifier": "22406", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Shikida, M."}], "nameIdentifiers": [{"nameIdentifier": "22407", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Sato, K."}], "nameIdentifiers": [{"nameIdentifier": "22408", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-19"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "shik_11.pdf", "filesize": [{"value": "180.4 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 180400.0, "url": {"label": "shik_11.pdf", "url": "https://nagoya.repo.nii.ac.jp/record/7847/files/shik_11.pdf"}, "version_id": "c53e9935-f194-43dc-b2e7-805c7d261761"}]}, "item_keyword": {"attribute_name": "\u30ad\u30fc\u30ef\u30fc\u30c9", "attribute_value_mlt": [{"subitem_subject": "single crystal silicon", "subitem_subject_scheme": "Other"}, {"subitem_subject": "fracture strength", "subitem_subject_scheme": "Other"}, {"subitem_subject": "size effect", "subitem_subject_scheme": "Other"}, {"subitem_subject": "environmental effect", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Effects of Environmental Condition on the Strength of Submicron-Thick Single Crystal Silicon Film", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Effects of Environmental Condition on the Strength of Submicron-Thick Single Crystal Silicon Film"}]}, "item_type_id": "10", "owner": "1", "path": ["320/321/322"], "permalink_uri": "http://hdl.handle.net/2237/9567", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_name_i18n": "\u516c\u958b\u65e5", "attribute_value": "2008-03-04"}, "publish_date": "2008-03-04", "publish_status": "0", "recid": "7847", "relation": {}, "relation_version_is_last": true, "title": ["Effects of Environmental Condition on the Strength of Submicron-Thick Single Crystal Silicon Film"], "weko_shared_id": 3}