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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Effects of Environmental Condition on the Strength of Submicron-Thick Single Crystal Silicon Film

http://hdl.handle.net/2237/9567
http://hdl.handle.net/2237/9567
a6b6635a-45b9-4c12-80bf-32d60277a871
名前 / ファイル ライセンス アクション
shik_11.pdf shik_11.pdf (180.4 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2008-03-04
タイトル
タイトル Effects of Environmental Condition on the Strength of Submicron-Thick Single Crystal Silicon Film
言語 en
著者 Nakao, S.

× Nakao, S.

WEKO 22405

en Nakao, S.

Search repository
Ando, T.

× Ando, T.

WEKO 22406

en Ando, T.

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Shikida, M.

× Shikida, M.

WEKO 22407

en Shikida, M.

Search repository
Sato, K.

× Sato, K.

WEKO 22408

en Sato, K.

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 Copyright © 2007 IEEE. Reprinted from (relevant publication info). This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Nagoya University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org.
キーワード
主題Scheme Other
主題 single crystal silicon
キーワード
主題Scheme Other
主題 fracture strength
キーワード
主題Scheme Other
主題 size effect
キーワード
主題Scheme Other
主題 environmental effect
抄録
内容記述 We developed a quasi-static tensile test system that controls environmental conditions, such as pressure, temperature, and surrounding gasses. Using this system, we evaluated the fracture properties of micron- and submicron-thick single-crystal-silicon film under several conditions. The strength of silicon measured in vacuum or helium was slightly higher than that in laboratory air. We measured the fracture toughness at different temperatures ranging from room temperature (RT) to 500ºC and found a brittle-to-ductile transition at 70ºC for micron-sized silicon film. The fracture toughness drastically increased at the transition temperature and saturated at a level of 2.5 MPa √ m , which is twice the value at RT. On the other hand, submicron-thick silicon was less brittle: its fracture toughness was already 2.7 MPa √m at RT.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 IEEE
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1109/SENSOR.2007.4300146
ISBN
関連タイプ isPartOf
識別子タイプ ISBN
関連識別子 1-4244-0842-3
書誌情報 en : Solid-State Sensors, Actuators and Microsystems Conference

p. 375-378, 発行日 2007
フォーマット
application/pdf
著者版フラグ
値 publisher
URI
識別子 http://hdl.handle.net/2237/9567
識別子タイプ HDL
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