{"_buckets": {"deposit": "6b5214dc-225c-4d86-9ddc-470eb9c2cec9"}, "_deposit": {"id": "10165", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "10165"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00010165"}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2008-08-07", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "053112", "bibliographicPageStart": "053112", "bibliographicVolumeNumber": "93", "bibliographic_titles": [{"bibliographic_title": "APPLIED PHYSICS LETTERS"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "High-density horizontally aligned single-walled carbon nanotubes are grown on a quartz substrate \nusing Co nanoparticles deposited by arc-discharge plasma method. The Co nanoparticles with a \ndensity as high as 6.0\u00d710^10 cm^{\u22122} are formed by a single pulse of arc discharge at room \ntemperature. The density of the aligned nanotubes is ~8 \u00b5m^{\u22121} in average. Multichannel nanotube \nfield-effect transistors with a high-k top-gate structure are fabricated with aligned nanotubes. \nThe devices show high-performance, normally on, and n-type conduction property without any doping\n process. A high on current of 1.3mA and a large transconductance of 0.23 mS for a channel width\n of 100 \u00b5m are obtained. The normally on and n-type property is attributed to fixed positive charges in the HfO_2 gate insulator and at the interfaces.", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "DOI", "subitem_identifier_uri": "http://dx.doi.org/10.1063/1.2969290"}, {"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/11983"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "American Institite of Physics"}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics."}]}, "item_10_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0003-6951", "subitem_source_identifier_type": "ISSN"}]}, "item_10_text_14": {"attribute_name": "\u30d5\u30a9\u30fc\u30de\u30c3\u30c8", "attribute_value_mlt": [{"subitem_text_value": "application/pdf"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Phokharatkul, D."}], "nameIdentifiers": [{"nameIdentifier": "30665", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ohno, Y."}], "nameIdentifiers": [{"nameIdentifier": "30666", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Nakano, H."}], "nameIdentifiers": [{"nameIdentifier": "30667", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kishimoto, S."}], "nameIdentifiers": [{"nameIdentifier": "30668", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Mizutani, T."}], "nameIdentifiers": [{"nameIdentifier": "30669", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-20"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "ApplPhysLett_93_053112.pdf", "filesize": [{"value": "704.0 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 704000.0, "url": {"label": "ApplPhysLett_93_053112.pdf", "url": "https://nagoya.repo.nii.ac.jp/record/10165/files/ApplPhysLett_93_053112.pdf"}, "version_id": "f8438f9c-1b6b-4d46-83af-c607e47f95e3"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "High-density horizontally aligned growth of carbon nanotubes with Co nanoparticles deposited by arc-discharge plasma method", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "High-density horizontally aligned growth of carbon nanotubes with Co nanoparticles deposited by arc-discharge plasma method"}]}, "item_type_id": "10", "owner": "1", "path": ["320/321/322"], "permalink_uri": "http://hdl.handle.net/2237/11983", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_value": "2009-07-29"}, "publish_date": "2009-07-29", "publish_status": "0", "recid": "10165", "relation": {}, "relation_version_is_last": true, "title": ["High-density horizontally aligned growth of carbon nanotubes with Co nanoparticles deposited by arc-discharge plasma method"], "weko_shared_id": null}