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  1. B200 工学部/工学研究科
  2. B200e 会議資料
  3. 国際会議

Nondestructive Measurement of Conductivity of Doped GaAs Using Compact Microwave Instrument

http://hdl.handle.net/2237/12139
http://hdl.handle.net/2237/12139
b2308717-ffbd-4e00-922d-ddace8a9c807
名前 / ファイル ライセンス アクション
205.pdf 205.pdf (739.6 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2009-09-01
タイトル
タイトル Nondestructive Measurement of Conductivity of Doped GaAs Using Compact Microwave Instrument
言語 en
著者 Ju, Yang

× Ju, Yang

WEKO 31302

en Ju, Yang

Search repository
Liu, Linsheng

× Liu, Linsheng

WEKO 31303

en Liu, Linsheng

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 Copyright © 2008 IEEE. Reprinted from 2nd Electronics Systemintegration Technology Conference, 2008. ESTC 2008. p.205-208.<br/>This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Nagoya University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org.
抄録
内容記述 Doped GaAs is the most important material in semiconductor industry. In this paper, we demonstrated a nondestructive method to measure the conductivity of GaAs wafers using a compact microwave instrument. In the experiment, 8 different GaAs wafers with thickness larger than 350 μm, and with resistivities in the range of 1.33 times 10^{-3}Ω・cm to 10.4 times 10^{-3} Ω・cm were measured. By using the intersection points of the evaluation curves obtained from known-resistivity wafer samples and the detected voltages for unknown-resistivity wafers, a nondestructive measurement method to determine the conductivity of GaAs wafer was realized. The measurement results are in agreement well with that obtained by using Hall effect measurement method.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 IEEE
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1109/ESTC.2008.4684350
書誌情報 en : 2nd Electronics Systemintegration Technology Conference (ESTC 2008)

p. 205-208, 発行日 2008-09
フォーマット
application/pdf
著者版フラグ
値 publisher
URI
識別子 http://dx.doi.org/10.1109/ESTC.2008.4684350
識別子タイプ DOI
URI
識別子 http://hdl.handle.net/2237/12139
識別子タイプ HDL
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