{"_buckets": {"deposit": "12ab8db8-8528-4e02-a5c3-de6614d300f3"}, "_deposit": {"id": "10319", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "10319"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00010319"}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2008-09", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "208", "bibliographicPageStart": "205", "bibliographic_titles": [{"bibliographic_title": "2nd Electronics Systemintegration Technology Conference (ESTC 2008)"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "Doped GaAs is the most important material in semiconductor industry. In this paper, we demonstrated a nondestructive method to measure the conductivity of GaAs wafers using a compact microwave instrument. In the experiment, 8 different GaAs wafers with thickness larger than 350 \u03bcm, and with resistivities in the range of 1.33 times 10^{-3}\u03a9\u30fbcm to 10.4 times 10^{-3} \u03a9\u30fbcm were measured. By using the intersection points of the evaluation curves obtained from known-resistivity wafer samples and the detected voltages for unknown-resistivity wafers, a nondestructive measurement method to determine the conductivity of GaAs wafer was realized. The measurement results are in agreement well with that obtained by using Hall effect measurement method.", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "DOI", "subitem_identifier_uri": "http://dx.doi.org/10.1109/ESTC.2008.4684350"}, {"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/12139"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "IEEE"}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "Copyright \u00a9 2008 IEEE. Reprinted from 2nd Electronics Systemintegration Technology Conference, 2008. ESTC 2008. p.205-208.\nThis material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Nagoya University\u2019s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org."}]}, "item_10_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_text_14": {"attribute_name": "\u30d5\u30a9\u30fc\u30de\u30c3\u30c8", "attribute_value_mlt": [{"subitem_text_value": "application/pdf"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Ju, Yang"}], "nameIdentifiers": [{"nameIdentifier": "31302", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Liu, Linsheng"}], "nameIdentifiers": [{"nameIdentifier": "31303", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-20"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "205.pdf", "filesize": [{"value": "739.6 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 739600.0, "url": {"label": "205.pdf", "url": "https://nagoya.repo.nii.ac.jp/record/10319/files/205.pdf"}, "version_id": "3f755316-113b-463b-a664-1988788a1427"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Nondestructive Measurement of Conductivity of Doped GaAs Using Compact Microwave Instrument", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Nondestructive Measurement of Conductivity of Doped GaAs Using Compact Microwave Instrument"}]}, "item_type_id": "10", "owner": "1", "path": ["320/502/503"], "permalink_uri": "http://hdl.handle.net/2237/12139", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_value": "2009-09-01"}, "publish_date": "2009-09-01", "publish_status": "0", "recid": "10319", "relation": {}, "relation_version_is_last": true, "title": ["Nondestructive Measurement of Conductivity of Doped GaAs Using Compact Microwave Instrument"], "weko_shared_id": null}