{"_buckets": {"deposit": "515599ce-2728-4ea7-a36c-8bea4a01eb7f"}, "_deposit": {"id": "10789", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "10789"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00010789"}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2009-03-18", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "11", "bibliographicPageEnd": "113505", "bibliographicPageStart": "113505", "bibliographicVolumeNumber": "94", "bibliographic_titles": [{"bibliographic_title": "APPLIED PHYSICS LETTERS"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "A broadband terahertz time-domain spectroscopy (TDS) system for frequencies of up to 15 THz,\nincluding the phonon resonance frequency range, has been developed using a transferred thin-film\nphotoconductive switch (PCS) detector. The thin-film PCSs, based on low-temperature-grown\nGaAs, were fabricated using epitaxial layer transfer onto high-resistivity Si substrates. We observed a reduction of phonon resonant absorption, including between 7 and 10 THz, in a forward radiation configuration. Numerically calculated absorption spectra show good agreement with our experimental results. This technique will provide compact, broadband TDS systems.", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/12632"}, {"subitem_identifier_type": "DOI", "subitem_identifier_uri": "http://dx.doi.org/10.1063/1.3103278"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "American Institite of Physics"}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "Copyright (2009) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior per\u3000mission of the author and the American Institute of Physics."}]}, "item_10_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0003-6951", "subitem_source_identifier_type": "ISSN"}]}, "item_10_text_14": {"attribute_name": "\u30d5\u30a9\u30fc\u30de\u30c3\u30c8", "attribute_value_mlt": [{"subitem_text_value": "application/pdf"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Kasai, S"}], "nameIdentifiers": [{"nameIdentifier": "32411", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Katagiri, T"}], "nameIdentifiers": [{"nameIdentifier": "32412", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Takayanagi, J"}], "nameIdentifiers": [{"nameIdentifier": "32413", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kawase, K"}], "nameIdentifiers": [{"nameIdentifier": "32414", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ouchi, T"}], "nameIdentifiers": [{"nameIdentifier": "32415", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-20"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "ApplPhysLett_94_113505.pdf", "filesize": [{"value": "109.3 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 109300.0, "url": {"label": "ApplPhysLett_94_113505.pdf", "url": "https://nagoya.repo.nii.ac.jp/record/10789/files/ApplPhysLett_94_113505.pdf"}, "version_id": "be6ad1b2-0763-46d3-b30b-7afc05d6296c"}]}, "item_keyword": {"attribute_name": "\u30ad\u30fc\u30ef\u30fc\u30c9", "attribute_value_mlt": [{"subitem_subject": "epitaxial layers", "subitem_subject_scheme": "Other"}, {"subitem_subject": "gallium arsenide", "subitem_subject_scheme": "Other"}, {"subitem_subject": "III-V semiconductors", "subitem_subject_scheme": "Other"}, {"subitem_subject": "phonons", "subitem_subject_scheme": "Other"}, {"subitem_subject": "photoconducting switches", "subitem_subject_scheme": "Other"}, {"subitem_subject": "terahertz wave spectra", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Reduction of phonon resonant terahertz wave absorption in photoconductive switches using epitaxial layer transfer", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Reduction of phonon resonant terahertz wave absorption in photoconductive switches using epitaxial layer transfer"}]}, "item_type_id": "10", "owner": "1", "path": ["673/674/675"], "permalink_uri": "http://hdl.handle.net/2237/12632", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_value": "2010-01-21"}, "publish_date": "2010-01-21", "publish_status": "0", "recid": "10789", "relation": {}, "relation_version_is_last": true, "title": ["Reduction of phonon resonant terahertz wave absorption in photoconductive switches using epitaxial layer transfer"], "weko_shared_id": null}