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Si clusters on reconstructed SiC (0001) revealed by surface extended x-ray absorption fine structure
http://hdl.handle.net/2237/14156
http://hdl.handle.net/2237/141567abb86c1-7b32-44ce-b42d-1695c46f853c
| 名前 / ファイル | ライセンス | アクション |
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APPLIED_PHYSICS_LETTERS_95_14_144102.pdf (151.9 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2010-09-16 | |||||
| タイトル | ||||||
| タイトル | Si clusters on reconstructed SiC (0001) revealed by surface extended x-ray absorption fine structure | |||||
| 言語 | en | |||||
| 著者 |
Gao, Xingyu
× Gao, Xingyu× Chen, Shi× Liu, Tao× Chen, Wei× Wee, A. T. S.× Nomoto, T.× Yagi, S.× Soda, Kazuo× Yuhara, Junji |
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| アクセス権 | ||||||
| アクセス権 | open access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
| 権利 | ||||||
| 言語 | en | |||||
| 権利情報 | Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The evolution of silicon carbide (0001) surface reconstruction upon annealing has been studied by Si K edge extended x-ray absorption fine structure (EXAFS). Using Si KVV Auger electron yield at different emission angles with different surface sensitivities, EXAFS reveals conclusively that Si–Si bonds exist on the surface for all reconstructions. The existence of Si clusters on the 6 square root of 3 × 6 square root of 3R30° surface was also confirmed by x-ray photoemission spectroscopy. This finding gives us a better understanding of epitaxial graphene formation on SiC. | |||||
| 言語 | en | |||||
| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| 出版タイプ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| DOI | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1063/1.3242005 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 0003-6951 | |||||
| 書誌情報 |
en : APPLIED PHYSICS LETTERS 巻 95, 号 14, p. 144102-144102, 発行日 2009-10 |
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| 値 | application/pdf | |||||
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| 値 | publisher | |||||
| URI | ||||||
| 識別子 | http://hdl.handle.net/2237/14156 | |||||
| 識別子タイプ | HDL | |||||
| URI | ||||||
| 識別子 | http://dx.doi.org/10.1063/1.3242005 | |||||
| 識別子タイプ | DOI | |||||
