{"_buckets": {"deposit": "9ffb904f-3be9-4ad5-926e-78e1e3df79ea"}, "_deposit": {"id": "12300", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "12300"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00012300", "sets": ["322"]}, "author_link": ["38894", "38895", "38896", "38897", "38898", "38899"], "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2010-01-04", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "1", "bibliographicPageEnd": "012105", "bibliographicPageStart": "012105", "bibliographicVolumeNumber": "96", "bibliographic_titles": [{"bibliographic_title": "APPLIED PHYSICS LETTERS", "bibliographic_titleLang": "en"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "Praseodymium (Pr) oxide films were grown by metal-organic chemical-vapor-deposition (CVD) using Pr(EtCp)3. Using H2O as an oxidant, Pr2O3 films with columnar structures are formed and its C concentration can be reduced to about one-tenth compared with the case using O2. Activation energy of 0.37 eV is derived for this CVD using H2O. This CVD-Pr oxide film deposited at 300 °C has a dielectric constant of 26±3. Furthermore, conduction band offset of 1.0±0.1 eV and trap levels of 0.40±0.02 and 0.22±0.02 eV in the CVD-Pr2O3/Si structure were also determined by current conduction characteristics.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/14181"}, {"subitem_identifier_type": "DOI", "subitem_identifier_uri": "http://dx.doi.org/10.1063/1.3275706"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics", "subitem_publisher_language": "en"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1063/1.3275706", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright (2010) American Institute of Physics. 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