{"_buckets": {"deposit": "6778d9a2-e6bb-4f15-a5cd-d84238098cd1"}, "_deposit": {"id": "21447", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "21447"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00021447", "sets": ["322"]}, "author_link": ["62294", "62295", "62296", "62297", "62298", "62299", "62300", "62301", "62302", "62303", "62304", "62305"], "item_10_alternative_title_19": {"attribute_name": "その他のタイトル", "attribute_value_mlt": [{"subitem_alternative_title": "Control of Interfacial Reactions in HfO_2 Atomic-Layer-Deposition on Ge(100) and Post-deposition Anneal with Ultrathin TiO_x Capping on Ge(100)", "subitem_alternative_title_language": "en"}]}, "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2011-06-27", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "114", "bibliographicPageEnd": "50", "bibliographicPageStart": "47", "bibliographicVolumeNumber": "111", "bibliographic_titles": [{"bibliographic_title": "電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス", "bibliographic_titleLang": "ja"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "High-k/Ge界面制御手法として、極薄TiO_2層の挿入に着目し、塩酸処理したGe(100)表面上へのTiO_2の原子層制御CVDを検討した。さらに、誘電率低下の要因となるGe界面酸化層の形成の抑制を目指し、TEMAT錯体の飽和吸着と熱分解の繰り返しにより極薄低酸化TiO_x(x\u003c2)層をGe(100)基板上に形成後、HfO_2層を原子層制御堆積した。熱処理前後でX線光電子分光法(XPS)を用いて界面反応を評価した結果、厚さ〜2nm以上のTiO_x挿入によりHfO_2膜中への顕著なGe原子の拡散を抑制可能であることを明らかとした。", "subitem_description_language": "ja", "subitem_description_type": "Abstract"}, {"subitem_description": "To control interfacial reaction between high-k dielectric and Ge(100) we focused on insertion of TiO_x ultrathin layer with a high permittivity(ε: 50-80) as a interfacial barrier layer and studied atomic-layer controlled CVD process of TiO_2 on HC1-treated Ge(100). In order to suppress the growth of GeO_x layer with a low permittivity during the formation of high-k dielectric such as HfO_2, TiO_x (x\u003c2) ultrathin layers were formed on Ge(100) by repeating saturated adsorption of TEMAT and its thermal decomposition. X-ray photoelectron spectroscopy after HfO_2 layer formation on TiO_x/Ge(100) show that Ge atoms diffusion in the HfO_2 layer is efficiently suppressed by inserting TiO_x thicker than 2nm.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "URI", "subitem_identifier_uri": "http://ci.nii.ac.jp/naid/110008800854/"}, {"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/23580"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "一般社団法人電子情報通信学会", "subitem_publisher_language": "ja"}]}, "item_10_relation_43": {"attribute_name": "関連情報", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "http://ci.nii.ac.jp/naid/110008800854/", "subitem_relation_type_select": "URI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "(c)一般社団法人電子情報通信学会 本文データは学協会の許諾に基づきCiNiiから複製したものである", "subitem_rights_language": "ja"}]}, "item_10_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "09135685", "subitem_source_identifier_type": "PISSN"}]}, "item_1615787544753": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "村上, 秀樹", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "62294", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "藤岡, 知宏", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "62295", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "大田, 晃生", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "62296", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "三嶋, 健斗", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "62297", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "東, 清一郎", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "62298", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "宮崎, 誠一", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "62299", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "MURAKAMI, Hideki", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "62300", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "FUJIOKA, Tomohiro", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "62301", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "OHTA, Akio", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "62302", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "MISHIMA, Kento", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "62303", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "HIGASHI, Seiichiro", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "62304", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "MIYAZAKI, Seiichi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "62305", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-21"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "110008800854.pdf", "filesize": [{"value": "674.1 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 674100.0, "url": {"label": "110008800854.pdf", "objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/21447/files/110008800854.pdf"}, "version_id": "0e0efaeb-8828-46bf-b9c1-ae7d96e05600"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "Geチャネル", "subitem_subject_scheme": "Other"}, {"subitem_subject": "ALD", "subitem_subject_scheme": "Other"}, {"subitem_subject": "界面反応", "subitem_subject_scheme": "Other"}, {"subitem_subject": "化学結合状態", "subitem_subject_scheme": "Other"}, {"subitem_subject": "X線光電子分光法", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Ge-Channel", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Atomic Layer Deposition", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Interfacial Reaction", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Chemical Bonding Feature", "subitem_subject_scheme": "Other"}, {"subitem_subject": "X-ray Photoelectron Spectroscopy (XPS)", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "jpn"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Ge(100)表面の極薄TiO_xキャッピングによるHfO_2原子層堆積/熱処理時の界面反応制御(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Ge(100)表面の極薄TiO_xキャッピングによるHfO_2原子層堆積/熱処理時の界面反応制御(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)", "subitem_title_language": "ja"}]}, "item_type_id": "10", "owner": "1", "path": ["322"], "permalink_uri": "http://hdl.handle.net/2237/23580", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2016-02-24"}, "publish_date": "2016-02-24", "publish_status": "0", "recid": "21447", "relation": {}, "relation_version_is_last": true, "title": ["Ge(100)表面の極薄TiO_xキャッピングによるHfO_2原子層堆積/熱処理時の界面反応制御(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)"], "weko_shared_id": -1}