{"_buckets": {"deposit": "99bf2571-6179-44b9-8e65-cd746472fe49"}, "_deposit": {"id": "21459", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "21459"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00021459"}, "item_10_alternative_title_19": {"attribute_name": "\u305d\u306e\u4ed6\u306e\u8a00\u8a9e\u306e\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_alternative_title": "Interface Reaction Control of HfO_2/Ge structure by an Insertion of TaO_x layer"}]}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2012-06-14", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "92", "bibliographicPageEnd": "36", "bibliographicPageStart": "33", "bibliographicVolumeNumber": "112", "bibliographic_titles": [{"bibliographic_title": "\u96fb\u5b50\u60c5\u5831\u901a\u4fe1\u5b66\u4f1a\u6280\u8853\u7814\u7a76\u5831\u544a. SDM, \u30b7\u30ea\u30b3\u30f3\u6750\u6599\u30fb\u30c7\u30d0\u30a4\u30b9"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "Ge\u30c1\u30e3\u30cd\u30ebMISFET\u5b9f\u73fe\u306e\u305f\u3081\u306b\u5fc5\u8981\u4e0d\u53ef\u6b20\u306aHigh-k/Ge\u754c\u9762\u5236\u5fa1\u624b\u6cd5\u3068\u3057\u3066\u3001\u6975\u8584TaOx\u5c64\u306e\u633f\u5165\u306b\u7740\u76ee\u3057\u3001Ge\u8868\u9762\u3078\u306eTaO_x\u306eMOCVD\u306b\u3088\u308bLayer-by-Layer\u6210\u819c\u3092\u884c\u3044\u3001\u754c\u9762\u8fd1\u508d\u306e\u5316\u5b66\u7d50\u5408\u72b6\u614b\u306b\u3064\u3044\u3066\u8a55\u4fa1\u3092\u884c\u3063\u305f\u3002\u305d\u306e\u7d50\u679c\u3001HfO_2/Ge\u754c\u9762\u306b\u5f62\u6210\u3057\u305fTaO_x\u633f\u5165\u5c64/Ge\u754c\u9762\u8fd1\u508d\u3067\u6210\u819c\u4e2d\u304a\u3088\u3073\u6210\u819c\u5f8c\u306e\u71b1\u8ca0\u8377\u306b\u3088\u308bTaO_x\u5c64\u4e2d\u3078\u306eGe\u306e\u62e1\u6563\u304c\u78ba\u8a8d\u3055\u308c\u308b\u3082\u306e\u306e\u3001\u539a\u3055\u301c1nm\u4ee5\u4e0a\u306eTaO_x\u633f\u5165\u304c\u3001\u8a98\u96fb\u7387\u4f4e\u4e0b\u306e\u8981\u56e0\u3068\u306a\u308bGe\u754c\u9762\u9178\u5316\u5c64\u306e\u5f62\u6210\u6291\u5236\u306b\u6709\u52b9\u3067\u3042\u308b\u3053\u3068\u304c\u660e\u3089\u304b\u3068\u306a\u3063\u305f\u3002\u307e\u305f\u3001Ge\u62e1\u6563\u306b\u3088\u308a\u754c\u9762\u306b\u5f62\u6210\u3055\u308c\u305fTaGe_xO_y\u5c64\u306e\u6bd4\u8a98\u96fb\u7387\u306f\u3001GeO_2\u306e\u5024\u306e\u7d041.7\u500d\u306e9\u3067\u3042\u308b\u3053\u3068\u304b\u3089\u3001EOT\u4f4e\u6e1b\u306b\u52b9\u679c\u7684\u3067\u3042\u308b\u3053\u3068\u3092\u660e\u3089\u304b\u306b\u3057\u305f\u3002To control interfacial reaction between high-k dielectric and Ge, we have focused on an insertion of TaO_x ultrathin layer as an interfacial barrier layer and studied MOCVD process of TaO_x with layer-by-layer fashion on Ge surface. XPS analyses show that Ge atoms diffuses into TaO_x layer during the formation of HfO_2 and cofirm that the Ge-oxide growth during atomic layer deposition of HfO_2 is effectively suppressed by inserting TaO_x layer thicker than 1nm. The dielectric constant of TaGe_xO_y layer formed by Ge atoms diffusion into TaO_x layer was determined to be \u301c9 being larger by a factor of 1.7 than that of GeO_2 (\u03b5\u301c5.2).", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "URI", "subitem_identifier_uri": "http://ci.nii.ac.jp/naid/110009588301/"}, {"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/23588"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "\u4e00\u822c\u793e\u56e3\u6cd5\u4eba\u96fb\u5b50\u60c5\u5831\u901a\u4fe1\u5b66\u4f1a"}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "(c)\u4e00\u822c\u793e\u56e3\u6cd5\u4eba\u96fb\u5b50\u60c5\u5831\u901a\u4fe1\u5b66\u4f1a 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