{"_buckets": {"deposit": "99bf2571-6179-44b9-8e65-cd746472fe49"}, "_deposit": {"id": "21459", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "21459"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00021459", "sets": ["322"]}, "author_link": ["62368", "62369", "62370", "62371", "62372", "62373", "62374", "62375", "62376", "62377", "62378", "62379"], "item_10_alternative_title_19": {"attribute_name": "その他のタイトル", "attribute_value_mlt": [{"subitem_alternative_title": "Interface Reaction Control of HfO_2/Ge structure by an Insertion of TaO_x layer", "subitem_alternative_title_language": "en"}]}, "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2012-06-14", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "92", "bibliographicPageEnd": "36", "bibliographicPageStart": "33", "bibliographicVolumeNumber": "112", "bibliographic_titles": [{"bibliographic_title": "電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス", "bibliographic_titleLang": "ja"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "GeチャネルMISFET実現のために必要不可欠なHigh-k/Ge界面制御手法として、極薄TaOx層の挿入に着目し、Ge表面へのTaO_xのMOCVDによるLayer-by-Layer成膜を行い、界面近傍の化学結合状態について評価を行った。その結果、HfO_2/Ge界面に形成したTaO_x挿入層/Ge界面近傍で成膜中および成膜後の熱負荷によるTaO_x層中へのGeの拡散が確認されるものの、厚さ〜1nm以上のTaO_x挿入が、誘電率低下の要因となるGe界面酸化層の形成抑制に有効であることが明らかとなった。また、Ge拡散により界面に形成されたTaGe_xO_y層の比誘電率は、GeO_2の値の約1.7倍の9であることから、EOT低減に効果的であることを明らかにした。", "subitem_description_language": "ja", "subitem_description_type": "Abstract"}, {"subitem_description": "To control interfacial reaction between high-k dielectric and Ge, we have focused on an insertion of TaO_x ultrathin layer as an interfacial barrier layer and studied MOCVD process of TaO_x with layer-by-layer fashion on Ge surface. XPS analyses show that Ge atoms diffuses into TaO_x layer during the formation of HfO_2 and cofirm that the Ge-oxide growth during atomic layer deposition of HfO_2 is effectively suppressed by inserting TaO_x layer thicker than 1nm. The dielectric constant of TaGe_xO_y layer formed by Ge atoms diffusion into TaO_x layer was determined to be 〜9 being larger by a factor of 1.7 than that of GeO_2 (ε〜5.2).", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "URI", "subitem_identifier_uri": "http://ci.nii.ac.jp/naid/110009588301/"}, {"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/23588"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "一般社団法人電子情報通信学会", "subitem_publisher_language": "ja"}]}, "item_10_relation_43": {"attribute_name": "関連情報", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "http://ci.nii.ac.jp/naid/110009588301/", "subitem_relation_type_select": "URI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "(c)一般社団法人電子情報通信学会 本文データは学協会の許諾に基づきCiNiiから複製したものである", "subitem_rights_language": "ja"}]}, "item_10_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0913-5685", "subitem_source_identifier_type": "PISSN"}]}, "item_1615787544753": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "村上, 秀樹", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "62368", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "三嶋, 健斗", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "62369", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "大田, 晃生", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "62370", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "橋本, 邦明", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "62371", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "東, 清一郎", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "62372", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "宮崎, 誠一", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "62373", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "MURAKAMI, Hideki", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "62374", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "MISHIMA, Kento", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "62375", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "OHTA, Akio", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "62376", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "HASHIMOTO, Kuniaki", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "62377", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "HIGASHI, Seiichiro", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "62378", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "MIYAZAKI, Seiichi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "62379", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-21"}], 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{"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "jpn"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "TaO_x層挿入によるHfO_2/Ge界面反応制御(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "TaO_x層挿入によるHfO_2/Ge界面反応制御(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)", "subitem_title_language": "ja"}]}, "item_type_id": "10", "owner": "1", "path": ["322"], "permalink_uri": "http://hdl.handle.net/2237/23588", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2016-02-24"}, "publish_date": "2016-02-24", "publish_status": "0", "recid": "21459", "relation": {}, "relation_version_is_last": true, "title": ["TaO_x層挿入によるHfO_2/Ge界面反応制御(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)"], "weko_shared_id": -1}