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Development of Blocked-Impurity-Band-Type Ge Detectors Fabricated with the Surface-Activated Wafer Bonding Method for Far-Infrared Astronomy
http://hdl.handle.net/2237/25269
http://hdl.handle.net/2237/25269c6daac3e-ca09-4006-aa48-33be46d85699
名前 / ファイル | ライセンス | アクション |
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Hanaoka2016.pdf ファイル公開:2017/07/01 (927.6 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2016-12-20 | |||||
タイトル | ||||||
タイトル | Development of Blocked-Impurity-Band-Type Ge Detectors Fabricated with the Surface-Activated Wafer Bonding Method for Far-Infrared Astronomy | |||||
言語 | en | |||||
著者 |
Hanaoka, M.
× Hanaoka, M.× Kaneda, H.× Oyabu, S.× Yamagishi, M.× Hattori, Y.× Ukai, S.× Shichi, K.× Wada, T.× Suzuki, T.× Watanabe, K.× Nagase, K.× Baba, S.× Kochi, C. |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | The final publication is available at Springer via http://doi.org/10.1007/s10909-016-1484-1 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Instrument | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Far-infrared detector | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Ge photoconductor | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Blocked-Impurity-Band detector | |||||
抄録 | ||||||
内容記述 | We report the current status of the development of our new detectors for far-infrared (FIR) astronomy. We develop Blocked-Impurity-Band (BIB)-type Ge detectors to realize large-format compact arrays covering a wide FIR wavelength range up to 200 μm. We fabricated Ge junction devices of different physical parameters with a BIB-type structure, using the room temperature, surface-activated wafer bonding (SAB) method. We measured the absolute responsivity and the spectral response curve of each device at low temperatures, using an internal blackbody source in a cryostat and a Fourier transform spectrometer, respectively. The results show that the SAB Ge junction devices have significantly higher absolute responsivities and longer cut-off wavelengths of the spectral response than the conventional bulk Ge:Ga device. Based upon the results, we discuss the optimum parameters of SAB Ge junction devices for FIR detectors. We conclude that SAB Ge junction devices possess a promising applicability to next-generation FIR detectors covering wavelengths up to ∼200 μm with high responsivity. As a next step, we plan to fabricate a BIB-type Ge array device in combination with a low-power cryogenic readout integrated circuit. | |||||
言語 | en | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | Springer | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
出版タイプ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1007/s10909-016-1484-1 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0022-2291 | |||||
書誌情報 |
en : Journal of Low Temperature Physics 巻 184, 号 1, p. 225-230, 発行日 2016-07 |
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著者版フラグ | ||||||
値 | author | |||||
URI | ||||||
識別子 | http://doi.org/10.1007/s10909-016-1484-1 | |||||
識別子タイプ | DOI | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/25269 | |||||
識別子タイプ | HDL |