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Development of Blocked-Impurity-Band-Type Ge Detectors Fabricated with the Surface-Activated Wafer Bonding Method for Far-Infrared Astronomy
http://hdl.handle.net/2237/25269
http://hdl.handle.net/2237/25269c6daac3e-ca09-4006-aa48-33be46d85699
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
Hanaoka2016.pdf ファイル公開：2017/07/01 (927.6 kB)
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| アイテムタイプ | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2016-12-20 | |||||
| タイトル | ||||||
| タイトル | Development of Blocked-Impurity-Band-Type Ge Detectors Fabricated with the Surface-Activated Wafer Bonding Method for Far-Infrared Astronomy | |||||
| 言語 | en | |||||
| 著者 |
Hanaoka, M.
× Hanaoka, M.× Kaneda, H.× Oyabu, S.× Yamagishi, M.× Hattori, Y.× Ukai, S.× Shichi, K.× Wada, T.× Suzuki, T.× Watanabe, K.× Nagase, K.× Baba, S.× Kochi, C. |
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| アクセス権 | ||||||
| アクセス権 | open access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
| 権利 | ||||||
| 権利情報 | The final publication is available at Springer via http://doi.org/10.1007/s10909-016-1484-1 | |||||
| 言語 | en | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Instrument | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Far-infrared detector | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Ge photoconductor | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Blocked-Impurity-Band detector | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | We report the current status of the development of our new detectors for far-infrared (FIR) astronomy. We develop Blocked-Impurity-Band (BIB)-type Ge detectors to realize large-format compact arrays covering a wide FIR wavelength range up to 200 μm. We fabricated Ge junction devices of different physical parameters with a BIB-type structure, using the room temperature, surface-activated wafer bonding (SAB) method. We measured the absolute responsivity and the spectral response curve of each device at low temperatures, using an internal blackbody source in a cryostat and a Fourier transform spectrometer, respectively. The results show that the SAB Ge junction devices have significantly higher absolute responsivities and longer cut-off wavelengths of the spectral response than the conventional bulk Ge:Ga device. Based upon the results, we discuss the optimum parameters of SAB Ge junction devices for FIR detectors. We conclude that SAB Ge junction devices possess a promising applicability to next-generation FIR detectors covering wavelengths up to ∼200 μm with high responsivity. As a next step, we plan to fabricate a BIB-type Ge array device in combination with a low-power cryogenic readout integrated circuit. | |||||
| 言語 | en | |||||
| 出版者 | ||||||
| 出版者 | Springer | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
| タイプ | journal article | |||||
| 出版タイプ | ||||||
| 出版タイプ | AM | |||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
| DOI | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1007/s10909-016-1484-1 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 0022-2291 | |||||
| 書誌情報 |
en : Journal of Low Temperature Physics 巻 184, 号 1, p. 225-230, 発行日 2016-07 |
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| 著者版フラグ | ||||||
| 値 | author | |||||
| URI | ||||||
| 識別子 | http://doi.org/10.1007/s10909-016-1484-1 | |||||
| 識別子タイプ | DOI | |||||
| URI | ||||||
| 識別子 | http://hdl.handle.net/2237/25269 | |||||
| 識別子タイプ | HDL | |||||
