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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

In situ SEM/STM observations and growth control of monolayer graphene on SiC (0001) wide terraces

http://hdl.handle.net/2237/25560
http://hdl.handle.net/2237/25560
383c7842-ac01-4372-9435-340406b72e9d
名前 / ファイル ライセンス アクション
Wang_SIA_2016_pp1221–1225.pdf Wang_SIA_2016_pp1221–1225.pdf ファイル公開:2017/11/01 (3.8 MB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2017-02-03
タイトル
タイトル In situ SEM/STM observations and growth control of monolayer graphene on SiC (0001) wide terraces
言語 en
著者 Wang, Chenxing

× Wang, Chenxing

WEKO 69280

en Wang, Chenxing

Search repository
Nakahara, Hitoshi

× Nakahara, Hitoshi

WEKO 69281

en Nakahara, Hitoshi

Search repository
Saito, Yahachi

× Saito, Yahachi

WEKO 69282

en Saito, Yahachi

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 This is the peer reviewed version of the following article: [Wang, C., Nakahara, H., and Saito, Y. (2016) In situ SEM/STM observations and growth control of monolayer graphene on SiC (0001) wide terraces. Surf. Interface Anal., 48: 1221–1225. doi: 10.1002/sia.6098.], which has been published in final form at [http://doi.org/10.1002/sia.6098]. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving.
抄録
内容記述 Thermal decomposition of silicon carbide (SiC) is frequently used for the formation of graphene on semi-insulating substrates, but the growth mechanism is not well understood and thus the method to form monolayer graphene with larger domain size especially on step-free or wide terrace surfaces is not known. In this work, various stages of graphene growth on SiC (0001) during annealing at 1-atm-Ar atmosphere were observed by in situ scanning electron microscopy and scanning tunneling microscopy. We found that a prolonged heating at 1550 °C over 1 h brought about the growth of monolayer graphene, starting from step edges and continuously across the whole terrace without pit formation. Monolayer graphene with the domain size over 3 µm was fabricated on wide terraces, which covered more than 90% areas of the sample surfaces.
言語 en
内容記述タイプ Abstract
内容記述
内容記述 Proceedings of the 10th International Symposium on Atomic Level Characterization for New Materials and Devices (ALC 2015),Matsue, Japan, 25-30 October 2015
言語 en
内容記述タイプ Other
出版者
言語 en
出版者 Wiley
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1002/sia.6098
ISSN
収録物識別子タイプ PISSN
収録物識別子 0142-2421
書誌情報 en : Surface and Interface

巻 48, 号 11, p. 1221-1225, 発行日 2016-11
著者版フラグ
値 author
URI
識別子 http://hdl.handle.net/2237/25560
識別子タイプ HDL
URI
識別子 http://doi.org/10.1002/sia.6098
識別子タイプ DOI
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