{"_buckets": {"deposit": "3eb84807-442b-4617-9d33-d03d4561ee12"}, "_deposit": {"id": "23369", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "23369"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00023369"}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2016-11", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "11", "bibliographicPageEnd": "1225", "bibliographicPageStart": "1221", "bibliographicVolumeNumber": "48", "bibliographic_titles": [{"bibliographic_title": "Surface and Interface"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "Thermal decomposition of silicon carbide (SiC) is frequently used for the formation of graphene on semi-insulating substrates, but the growth mechanism is not well understood and thus the method to form monolayer graphene with larger domain size especially on step-free or wide terrace surfaces is not known. In this work, various stages of graphene growth on SiC (0001) during annealing at 1-atm-Ar atmosphere were observed by in situ scanning electron microscopy and scanning tunneling microscopy. We found that a prolonged heating at 1550\u2009\u00b0C over 1\u2009h brought about the growth of monolayer graphene, starting from step edges and continuously across the whole terrace without pit formation. Monolayer graphene with the domain size over 3\u2009\u00b5m was fabricated on wide terraces, which covered more than 90% areas of the sample surfaces.", "subitem_description_type": "Abstract"}]}, "item_10_description_5": {"attribute_name": "\u5185\u5bb9\u8a18\u8ff0", "attribute_value_mlt": [{"subitem_description": "Proceedings of the 10th International Symposium on Atomic Level Characterization for New Materials and Devices (ALC 2015),Matsue, Japan, 25-30 October 2015", "subitem_description_type": "Other"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/25560"}, {"subitem_identifier_type": "DOI", "subitem_identifier_uri": "http://doi.org/10.1002/sia.6098"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "Wiley"}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "\"This is the peer reviewed version of the following article: [Wang, C., Nakahara, H., and Saito, Y. (2016) In situ SEM/STM observations and growth control of monolayer graphene on SiC (0001) wide terraces. Surf. Interface Anal., 48: 1221\u20131225. doi: 10.1002/sia.6098.], which has been published in final form at [http://doi.org/10.1002/sia.6098]. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving.\""}]}, "item_10_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0142-2421", "subitem_source_identifier_type": "ISSN"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Wang, Chenxing"}], "nameIdentifiers": [{"nameIdentifier": "69280", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Nakahara, Hitoshi"}], "nameIdentifiers": [{"nameIdentifier": "69281", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Saito, Yahachi"}], "nameIdentifiers": [{"nameIdentifier": "69282", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2017-11-01"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "Wang_SIA_2016_pp1221\u20131225.pdf", "filesize": [{"value": "3.8 MB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 3800000.0, "url": {"label": "Wang_SIA_2016_pp1221\u20131225.pdf \u30d5\u30a1\u30a4\u30eb\u516c\u958b\uff1a2017/11/01", "url": "https://nagoya.repo.nii.ac.jp/record/23369/files/Wang_SIA_2016_pp1221\u20131225.pdf"}, "version_id": "8e0b84f3-c0ed-4995-96bb-21690adee49c"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "In situ SEM/STM observations and growth control of monolayer graphene on SiC (0001) wide terraces", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "In situ SEM/STM observations and growth control of monolayer graphene on SiC (0001) wide terraces"}]}, "item_type_id": "10", "owner": "1", "path": ["320/321/322"], "permalink_uri": "http://hdl.handle.net/2237/25560", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_value": "2017-02-03"}, "publish_date": "2017-02-03", "publish_status": "0", "recid": "23369", "relation": {}, "relation_version_is_last": true, "title": ["In situ SEM/STM observations and growth control of monolayer graphene on SiC (0001) wide terraces"], "weko_shared_id": null}