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In situ SEM/STM observations and growth control of monolayer graphene on SiC (0001) wide terraces
http://hdl.handle.net/2237/25560
http://hdl.handle.net/2237/25560383c7842-ac01-4372-9435-340406b72e9d
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
Wang_SIA_2016_pp1221–1225.pdf ファイル公開：2017/11/01 (3.8 MB)
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| アイテムタイプ | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2017-02-03 | |||||
| タイトル | ||||||
| タイトル | In situ SEM/STM observations and growth control of monolayer graphene on SiC (0001) wide terraces | |||||
| 言語 | en | |||||
| 著者 |
Wang, Chenxing
× Wang, Chenxing× Nakahara, Hitoshi× Saito, Yahachi |
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| アクセス権 | ||||||
| アクセス権 | open access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
| 権利 | ||||||
| 権利情報 | This is the peer reviewed version of the following article: [Wang, C., Nakahara, H., and Saito, Y. (2016) In situ SEM/STM observations and growth control of monolayer graphene on SiC (0001) wide terraces. Surf. Interface Anal., 48: 1221–1225. doi: 10.1002/sia.6098.], which has been published in final form at [http://doi.org/10.1002/sia.6098]. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving. | |||||
| 言語 | en | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Thermal decomposition of silicon carbide (SiC) is frequently used for the formation of graphene on semi-insulating substrates, but the growth mechanism is not well understood and thus the method to form monolayer graphene with larger domain size especially on step-free or wide terrace surfaces is not known. In this work, various stages of graphene growth on SiC (0001) during annealing at 1-atm-Ar atmosphere were observed by in situ scanning electron microscopy and scanning tunneling microscopy. We found that a prolonged heating at 1550 °C over 1 h brought about the growth of monolayer graphene, starting from step edges and continuously across the whole terrace without pit formation. Monolayer graphene with the domain size over 3 µm was fabricated on wide terraces, which covered more than 90% areas of the sample surfaces. | |||||
| 言語 | en | |||||
| 内容記述 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | Proceedings of the 10th International Symposium on Atomic Level Characterization for New Materials and Devices (ALC 2015),Matsue, Japan, 25-30 October 2015 | |||||
| 言語 | en | |||||
| 出版者 | ||||||
| 出版者 | Wiley | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
| タイプ | journal article | |||||
| 出版タイプ | ||||||
| 出版タイプ | AM | |||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
| DOI | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1002/sia.6098 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 0142-2421 | |||||
| 書誌情報 |
en : Surface and Interface 巻 48, 号 11, p. 1221-1225, 発行日 2016-11 |
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| 著者版フラグ | ||||||
| 値 | author | |||||
| URI | ||||||
| 識別子 | http://hdl.handle.net/2237/25560 | |||||
| 識別子タイプ | HDL | |||||
| URI | ||||||
| 識別子 | http://doi.org/10.1002/sia.6098 | |||||
| 識別子タイプ | DOI | |||||
