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Purification of 1.9-nm-diameter semiconducting single-wall carbon nanotubes by temperature-controlled gel-column chromatography and its application to thin-film transistor devices
http://hdl.handle.net/2237/26953
http://hdl.handle.net/2237/269535725d76e-bb0e-4601-96f2-fb6eb211432b
名前 / ファイル | ライセンス | アクション |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2017-09-05 | |||||
タイトル | ||||||
タイトル | Purification of 1.9-nm-diameter semiconducting single-wall carbon nanotubes by temperature-controlled gel-column chromatography and its application to thin-film transistor devices | |||||
言語 | en | |||||
著者 |
Thendie, Boanerges
× Thendie, Boanerges× Omachi, Haruka× Hirotani, Jun× Ohno, Yutaka× Miyata, Yasumitsu× Shinohara, Hisanori |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | © 2017 The Japan Society of Applied Physics | |||||
抄録 | ||||||
内容記述 | Large-diameter semiconductor single-wall carbon nanotubes (s-SWCNTs) have superior mobility and conductivity to small-diameter s-SWCNTs. However, the purification of s-SWCNTs with diameters larger than 1.6 nm by gel filtration has been difficult owing to the low selectivity of the conventional purification method in these large-diameter regions. We report a combination of temperature-controlled gel filtration and the gradient elution technique that we developed to enrich a high-purity s-SWCNT with a diameter as large as 1.9 nm. The thin-film transistor (TFT) device using the 1.9-nm-diameter SWCNT shows an average channel mobility of 23.7 cm2V^−1s^−1, which is much higher than those of conventional SWCNT-TFTs with smaller-diameters of 1.5 and 1.4 nm. | |||||
言語 | en | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | IOP publishing | |||||
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言語 | eng | |||||
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資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
出版タイプ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.7567/JJAP.56.065102 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0021-4922 | |||||
書誌情報 |
en : Japanese Journal of Applied Physics 巻 56, 号 6, p. 065102-065102, 発行日 2017-06 |
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著者版フラグ | ||||||
値 | author | |||||
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識別子 | https://doi.org/10.7567/JJAP.56.065102 | |||||
識別子タイプ | DOI | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/26953 | |||||
識別子タイプ | HDL |