{"_buckets": {"deposit": "fc864aa1-5cc1-4509-8381-eedd5f4389ee"}, "_deposit": {"id": "26313", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "26313"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00026313", "sets": ["675"]}, "author_link": ["79277", "79278", "79279", "79280", "79281", "79282", "79283", "79284"], "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2018-05", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "5", "bibliographicPageStart": "051002", "bibliographicVolumeNumber": "11", "bibliographic_titles": [{"bibliographic_title": "Applied Physics Express", "bibliographic_titleLang": "en"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "Hexagonal boron nitride (h-BN) films directly grown on c-plane sapphire substrates by pulsed-mode metalorganic vapor phase epitaxy exhibit an interlayer for growth temperatures above 1200 °C. Cross-sectional transmission electron microscopy shows that this interlayer is amorphous, while the crystalline h-BN layer above has a distinct orientational relationship with the sapphire substrate. Electron energy loss spectroscopy shows the energy-loss peaks of B and N in both the amorphous interlayer and the overlying crystalline h-BN layer, while Al and O signals are also seen in the amorphous interlayer. Thus, the interlayer forms during h-BN growth through the decomposition of the sapphire at elevated temperatures.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_description_5": {"attribute_name": "内容記述", "attribute_value_mlt": [{"subitem_description": "ファイル公開：2019/05/01", "subitem_description_language": "ja", "subitem_description_type": "Other"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "IOP publishing", "subitem_publisher_language": "en"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.7567/APEX.11.051002", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "© 2018 The Japan Society of Applied Physics", "subitem_rights_language": "en"}]}, "item_10_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "1882-0778", "subitem_source_identifier_type": "PISSN"}]}, "item_1615787544753": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_ab4af688f83e57aa", "subitem_version_type": "AM"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Yang, Xu", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "79277", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Nitta, Shugo", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "79278", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Pristovsek, Markus", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "79279", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Liu, Yuhuai", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "79280", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Nagamatsu, Kentaro", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "79281", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kushimoto, Maki", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "79282", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Honda, Yoshio", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "79283", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Amano, Hiroshi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "79284", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2019-05-01"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "Yang_APEX_11_5_051002.pdf", "filesize": [{"value": "424.4 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 424400.0, "url": {"label": "Yang_APEX_11_5_051002", "objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/26313/files/Yang_APEX_11_5_051002.pdf"}, "version_id": "597e838a-e9f0-4336-aa93-1fd08c670e91"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy", "subitem_title_language": "en"}]}, "item_type_id": "10", "owner": "1", "path": ["675"], "permalink_uri": "http://hdl.handle.net/2237/00028516", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2018-08-20"}, "publish_date": "2018-08-20", "publish_status": "0", "recid": "26313", "relation": {}, "relation_version_is_last": true, "title": ["Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy"], "weko_shared_id": -1}