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  1. F200 未来材料・システム研究所
  2. F200a 雑誌掲載論文
  3. 学術雑誌

GaN-on-Si resonant-cavity light-emitting diode incorporating top and bottom dielectric distributed Bragg reflectors

http://hdl.handle.net/2237/00030420
http://hdl.handle.net/2237/00030420
0b9befab-ffcd-45d8-af3a-13c9347e4d3a
名前 / ファイル ライセンス アクション
GaN-on-Si_resonant-cavity_light-emitting_diode.pdf GaN-on-Si_resonant-cavity_light-emitting_diode (917.4 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2019-06-12
タイトル
タイトル GaN-on-Si resonant-cavity light-emitting diode incorporating top and bottom dielectric distributed Bragg reflectors
言語 en
著者 Cai, Wei

× Cai, Wei

WEKO 91898

en Cai, Wei

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Yuan, Jialei

× Yuan, Jialei

WEKO 91899

en Yuan, Jialei

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Ni, Shuyu

× Ni, Shuyu

WEKO 91900

en Ni, Shuyu

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Shi, Zheng

× Shi, Zheng

WEKO 91901

en Shi, Zheng

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Zhou, Weidong

× Zhou, Weidong

WEKO 91902

en Zhou, Weidong

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Liu, Yuhuai

× Liu, Yuhuai

WEKO 91903

en Liu, Yuhuai

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Wang, Yongjin

× Wang, Yongjin

WEKO 91904

en Wang, Yongjin

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Amano, Hiroshi

× Amano, Hiroshi

WEKO 91905

en Amano, Hiroshi

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アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 This is an author-created, un-copyedited version of an article published in {Applied Physics Express}. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at {https://doi.org/10.7567/1882-0786/ab023c}. “This Accepted Manuscript is available for reuse under a CC BY-NC-ND 3.0 licence after the 12 month embargo period provided that all the terms of the licence are adhered to”
抄録
内容記述 We report here a GaN-based resonant cavity light-emitting diode (RCLED) with top and bottom dielectric TiO2/SiO2 distributed Bragg reflector (DBR) mirrors on a silicon substrate. High data transmission in free space at 200 Mbps with an opening in the eye diagram was achieved. The results show that the combination of GaN-based LED on silicon and double sided dielectric DBR mirror deposition enables a manufacturable process which provides a unique opportunity for commercialization of RCLED in future solid-state lighting and visible light communication applications.
言語 en
内容記述タイプ Abstract
内容記述
内容記述 ファイル公開:2020-03-01
言語 ja
内容記述タイプ Other
出版者
言語 en
出版者 IOP publishing
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.7567/1882-0786/ab023c
ISSN(print)
収録物識別子タイプ PISSN
収録物識別子 1882-0778
ISSN(Online)
収録物識別子タイプ EISSN
収録物識別子 1882-0786
書誌情報 en : Applied Physics Express

巻 12, 号 3, p. 032004, 発行日 2019-03
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