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Tuning the Electrical Properties of Titanium Oxide Bilayers Prepared by Atomic Layer Deposition at Different Temperatures
http://hdl.handle.net/2237/00031208
http://hdl.handle.net/2237/00031208be2e0663-eec2-4c04-b5e1-9975709cac9d
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
PSSA_Stack_final (1.0 MB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2020-01-17 | |||||
| タイトル | ||||||
| タイトル | Tuning the Electrical Properties of Titanium Oxide Bilayers Prepared by Atomic Layer Deposition at Different Temperatures | |||||
| 言語 | en | |||||
| 著者 |
Gotoh, Kazuhiro
× Gotoh, Kazuhiro× Mochizuki, Takeya× Kurokawa, Yasuyoshi× Usami, Noritaka |
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| アクセス権 | ||||||
| アクセス権 | open access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
| 権利 | ||||||
| 言語 | en | |||||
| 権利情報 | This is the peer reviewed version of the following article: [Gotoh, K., Mochizuki, T., Kurokawa, Y. and Usami, N. (2019), Tuning the Electrical Properties of Titanium Oxide Bilayers Prepared by Atomic Layer Deposition at Different Temperatures. Phys. Status Solidi A, 216: 1900495. doi:10.1002/pssa.201900495], which has been published in final form at [https://doi.org/10.1002/pssa.201900495]. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | atomic layer deposition | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | crystalline silicon | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | passivation | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | titanium oxide | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Carrier‐selective contacts prepared by atomic layer deposition (ALD) have received significant attention for developing high‐efficiency solar cells. Herein, the electrical properties of titanium oxide (TiOx) prepared by ALD are manipulated by modulating the deposition temperature during ALD. Tunable electrical properties are possible due to the existence of oxygen vacancies in TiOx prepared at low deposition temperatures. TiOx layers prepared at 100 and 150 °C provide a low contact resistivity and high passivation performance, respectively. A high carrier selectivity of 13.5 is achieved by stacking the TiOx layers prepared at 100 and 150 °C, compared with a single TiOx layer. Modulating the deposition temperature can, therefore, improve the electrical properties of ALD‐TiOx. This approach can be used to optimize the functionality of ALD‐based materials. | |||||
| 言語 | en | |||||
| 内容記述 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | ファイル公開：2020-11-01 | |||||
| 言語 | ja | |||||
| 出版者 | ||||||
| 出版者 | Wiley | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
| タイプ | journal article | |||||
| 出版タイプ | ||||||
| 出版タイプ | AM | |||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
| DOI | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1002/pssa.201900495 | |||||
| ISSN（print） | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 1862-6300 | |||||
| 書誌情報 |
en : physica status solidi (a) 巻 216, 号 22, p. 1900495, 発行日 2019-11 |
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| 著者版フラグ | ||||||
| 値 | author | |||||
