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  1. B100 理学部/理学研究科
  2. B100a 雑誌掲載論文
  3. 学術雑誌

Dual-gate field-effect transistors of octathio[8]circulene thin-films with ionic liquid and SiO2 gate dielectrics

http://hdl.handle.net/2237/00031524
bead2529-113d-496d-b967-a8e56aa1b50b
名前 / ファイル ライセンス アクション
1_3491807.pdf 1_3491807 (934.7 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2020-02-19
タイトル
タイトル Dual-gate field-effect transistors of octathio[8]circulene thin-films with ionic liquid and SiO2 gate dielectrics
著者 Fujimoto, Takuya

× Fujimoto, Takuya

WEKO 96167

Fujimoto, Takuya

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Matsushita, Michio M.

× Matsushita, Michio M.

WEKO 96168

Matsushita, Michio M.

Search repository
Awaga, Kunio

× Awaga, Kunio

WEKO 96169

Awaga, Kunio

Search repository
権利
権利情報 Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in (Applied Physics Letters. v.97, n.12, 2010, p.123303) and may be found at (http://dx.doi.org/10.1063/1.3491807).
抄録
内容記述 Dual-gate organic thin-film transistors (OTFTs) of octathio[8]circulene (1) with ionic liquid and SiO2 gate dielectrics lead to good transistor performance with a high on/off ratio (∼10^5), a low threshold voltage (∼−5 V), a low subthreshold slope (∼150 mV/decade), and low power operation, thus surpassing the performance of the single-gate OTFTs of 1. This operation is a promising method for improving the carrier concentrations in OTFTs and for realizing high-performance OTFTs.
内容記述タイプ Abstract
出版者
出版者 AIP Publishing
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
DOI
関連識別子
識別子タイプ DOI
関連識別子 https://doi.org/10.1063/1.3491807
ISSN(print)
収録物識別子タイプ ISSN
収録物識別子 0003-6951
書誌情報 Applied Physics Letters

巻 97, 号 12, p. 123303, 発行日 2010-09
著者版フラグ
値 publisher
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