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  1. F200 未来材料・システム研究所
  2. F200a 雑誌掲載論文
  3. 学術雑誌

Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO

http://hdl.handle.net/2237/00032643
http://hdl.handle.net/2237/00032643
c1a23542-c8c5-4277-93fc-6a46e51b0a9e
名前 / ファイル ライセンス アクション
Mg-doping_Ohnishiv14_revision20200408-3.pdf Mg-doping_Ohnishiv14_revision20200408-3 (466.8 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2020-09-17
タイトル
タイトル Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO
言語 en
著者 Ohnishi, Kazuki

× Ohnishi, Kazuki

WEKO 101287

en Ohnishi, Kazuki

Search repository
Amano, Yuki

× Amano, Yuki

WEKO 101288

en Amano, Yuki

Search repository
Fujimoto, Naoki

× Fujimoto, Naoki

WEKO 101289

en Fujimoto, Naoki

Search repository
Nitta, Shugo

× Nitta, Shugo

WEKO 101290

en Nitta, Shugo

Search repository
Honda, Yoshio

× Honda, Yoshio

WEKO 101291

en Honda, Yoshio

Search repository
Amano, Hiroshi

× Amano, Hiroshi

WEKO 101292

en Amano, Hiroshi

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 This is an author-created, un-copyedited version of an article published in {Applied Physics Express}. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at {https://doi.org/10.35848/1882-0786/ab9166}. “This Accepted Manuscript is available for reuse under a CC BY-NC-ND 4.0 licence after the 12 month embargo period provided that all the terms of the licence are adhered to”
抄録
内容記述 Halide vapor phase epitaxy of p-type GaN:Mg films was realized by using solid MgO as the Mg source. The Mg concentration was controlled by supplying HCl gas in a MgO source zone. Mg-related photoluminescence peaks were observed at around 3.3 and 2.9 eV. For a sample with a Mg concentration of 2.8 × 10^19 cm^−3, the Hall-effect measurement showed p-type conduction with a hole concentration and a hole mobility of 1.3 × 10^17 cm^−3 and 9.1 cm^2 V^−1 s^−1, respectively, at room temperature. The Mg acceptor level was 232 ± 15 meV, which is in good agreement with the previous report.
言語 en
内容記述タイプ Abstract
内容記述
内容記述 ファイル公開:2021-06-01
言語 ja
内容記述タイプ Other
出版者
言語 en
出版者 IOP publishing
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.35848/1882-0786/ab9166
ISSN(print)
収録物識別子タイプ PISSN
収録物識別子 1882-0778
書誌情報 en : Applied Physics Express

巻 13, 号 6, p. 061007, 発行日 2020-06
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