{"_buckets": {"deposit": "a23affff-d946-4cf7-a69a-f5793a5541ed"}, "_deposit": {"id": "30458", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "30458"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00030458"}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2020-06", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "6", "bibliographicPageStart": "061007", "bibliographicVolumeNumber": "13", "bibliographic_titles": [{"bibliographic_title": "Applied Physics Express"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "Halide vapor phase epitaxy of p-type GaN:Mg films was realized by using solid MgO as the Mg source. The Mg concentration was controlled by supplying HCl gas in a MgO source zone. Mg-related photoluminescence peaks were observed at around 3.3 and 2.9 eV. For a sample with a Mg concentration of 2.8 \u00d7 10^19 cm^\u22123, the Hall-effect measurement showed p-type conduction with a hole concentration and a hole mobility of 1.3 \u00d7 10^17 cm^\u22123 and 9.1 cm^2 V^\u22121 s^\u22121, respectively, at room temperature. The Mg acceptor level was 232 \u00b1 15 meV, which is in good agreement with the previous report.", "subitem_description_type": "Abstract"}]}, "item_10_description_5": {"attribute_name": "\u5185\u5bb9\u8a18\u8ff0", "attribute_value_mlt": [{"subitem_description": "\u30d5\u30a1\u30a4\u30eb\u516c\u958b\uff1a2021-06-01", "subitem_description_type": "Other"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "IOP publishing"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.35848/1882-0786/ab9166", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "This is an author-created, un-copyedited version of an article published in {Applied Physics Express}. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at {https://doi.org/10.35848/1882-0786/ab9166}.\u3000\u201cThis Accepted Manuscript is available for reuse under a CC BY-NC-ND 4.0 licence after the 12 month embargo period provided that all the terms of the licence are adhered to\u201d"}]}, "item_10_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_10_source_id_61": {"attribute_name": "ISSN\uff08print\uff09", "attribute_value_mlt": [{"subitem_source_identifier": "1882-0778", "subitem_source_identifier_type": "ISSN"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Ohnishi, Kazuki"}], "nameIdentifiers": [{"nameIdentifier": "101287", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Amano, Yuki"}], "nameIdentifiers": [{"nameIdentifier": "101288", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Fujimoto, Naoki"}], "nameIdentifiers": [{"nameIdentifier": "101289", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Nitta, Shugo"}], "nameIdentifiers": [{"nameIdentifier": "101290", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Honda, Yoshio"}], "nameIdentifiers": [{"nameIdentifier": "101291", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Amano, Hiroshi"}], "nameIdentifiers": [{"nameIdentifier": "101292", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2021-06-01"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "Mg-doping_Ohnishiv14_revision20200408-3.pdf", "filesize": [{"value": "466.8 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 466800.0, "url": {"label": "Mg-doping_Ohnishiv14_revision20200408-3", "url": "https://nagoya.repo.nii.ac.jp/record/30458/files/Mg-doping_Ohnishiv14_revision20200408-3.pdf"}, "version_id": "23577064-2dc6-4242-96d0-d9c007622b6e"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO"}]}, "item_type_id": "10", "owner": "1", "path": ["673/674/675"], "permalink_uri": "http://hdl.handle.net/2237/00032643", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_value": "2020-09-17"}, "publish_date": "2020-09-17", "publish_status": "0", "recid": "30458", "relation": {}, "relation_version_is_last": true, "title": ["Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO"], "weko_shared_id": null}