{"_buckets": {"deposit": "562572d5-6488-4f8c-840c-7393245182c0"}, "_deposit": {"id": "30890", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "30890"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00030890", "sets": []}, "author_link": ["102238", "102239"], "item_9_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "1980-11-30", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "1", "bibliographicPageEnd": "157", "bibliographicPageStart": "143", "bibliographicVolumeNumber": "32", "bibliographic_titles": [{"bibliographic_title": "Memoirs of the Faculty of Engineering, Nagoya University"}]}]}, "item_9_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "The effect of the ion-implanted surface layer on the relationship between the bubble deflection angle \u03b8 and the in-plane field H_ip is investigated. The samples used are either etched a part of the surface layer implanted Ne^+ ions of l00 keV to a dosage of 7\u00d710^13 cm^-2 or implanted to various dosages. In the samples implanted to a dosage of 7\u00d710^13 cm^-2, it is found that the effective layer determining the wall structure of the underlying bubble exists in the region between 500 and 800 \u00c5 deep from the surface. In the sample implanted to as high dosage as 10^15 cm^-2, \u03b8 varies with increasing and then dcereasing H_ip gradually rather than abruptly as generally seen. These results are interpreted based on the relevant works on the magnetic properties of the ion-implanted layer and the bubble state transitions.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_9_identifier_registration": {"attribute_name": "ID\u767b\u9332", "attribute_value_mlt": [{"subitem_identifier_reg_text": "10.18999/memfenu.32.1.143", "subitem_identifier_reg_type": "JaLC"}]}, "item_9_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "Faculty of Engineering, Nagoya University"}]}, "item_9_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_9_source_id_7": {"attribute_name": "ISSN\uff08print\uff09", "attribute_value_mlt": [{"subitem_source_identifier": "0027-7657", "subitem_source_identifier_type": "PISSN"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Shiomi, Shigeru", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "102238", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Uchiyama, Susumu", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "102239", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2020-11-24"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "32-1-03.pdf", "filesize": [{"value": "1.5 MB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 1500000.0, "url": {"label": "32-1-03.pdf", "url": "https://nagoya.repo.nii.ac.jp/record/30890/files/32-1-03.pdf"}, "version_id": "09043430-a5b7-4279-b111-4c1d60741c95"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "departmental bulletin paper", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Effect of surface layer etching and ion-dosage on bubble state transition in ion-implanted garnet films", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Effect of surface layer etching and ion-dosage on bubble state transition in ion-implanted garnet films", "subitem_title_language": "en"}]}, "item_type_id": "9", "owner": "1", "path": ["320/2524/2544/2588"], "permalink_uri": "https://doi.org/10.18999/memfenu.32.1.143", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2020-11-24"}, "publish_date": "2020-11-24", "publish_status": "0", "recid": "30890", "relation": {}, "relation_version_is_last": true, "title": ["Effect of surface layer etching and ion-dosage on bubble state transition in ion-implanted garnet films"], "weko_shared_id": -1}