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Effect of surface layer etching and ion-dosage on bubble state transition in ion-implanted garnet films
https://doi.org/10.18999/memfenu.32.1.143
https://doi.org/10.18999/memfenu.32.1.143032015f1-3738-4bb8-9dd3-f5a1612295ab
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
32-1-03.pdf (1.5 MB)
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| Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2020-11-24 | |||||
| タイトル | ||||||
| タイトル | Effect of surface layer etching and ion-dosage on bubble state transition in ion-implanted garnet films | |||||
| 言語 | en | |||||
| 著者 |
Shiomi, Shigeru
× Shiomi, Shigeru× Uchiyama, Susumu |
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| アクセス権 | ||||||
| アクセス権 | open access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The effect of the ion-implanted surface layer on the relationship between the bubble deflection angle θ and the in-plane field H_ip is investigated. The samples used are either etched a part of the surface layer implanted Ne^+ ions of l00 keV to a dosage of 7×10^13 cm^-2 or implanted to various dosages. In the samples implanted to a dosage of 7×10^13 cm^-2, it is found that the effective layer determining the wall structure of the underlying bubble exists in the region between 500 and 800 Å deep from the surface. In the sample implanted to as high dosage as 10^15 cm^-2, θ varies with increasing and then dcereasing H_ip gradually rather than abruptly as generally seen. These results are interpreted based on the relevant works on the magnetic properties of the ion-implanted layer and the bubble state transitions. | |||||
| 言語 | en | |||||
| 出版者 | ||||||
| 出版者 | Faculty of Engineering, Nagoya University | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源 | http://purl.org/coar/resource_type/c_6501 | |||||
| タイプ | departmental bulletin paper | |||||
| 出版タイプ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| ID登録 | ||||||
| ID登録 | 10.18999/memfenu.32.1.143 | |||||
| ID登録タイプ | JaLC | |||||
| ISSN（print） | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 0027-7657 | |||||
| 書誌情報 |
en : Memoirs of the Faculty of Engineering, Nagoya University 巻 32, 号 1, p. 143-157, 発行日 1980-11-30 |
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| 著者版フラグ | ||||||
| 値 | publisher | |||||
