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Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces
http://hdl.handle.net/2237/00033517
http://hdl.handle.net/2237/00033517c55096b8-66fb-4785-9838-b85e33bda115
名前 / ファイル | ライセンス | アクション |
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APL20-AR-03033R (856.3 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2021-02-10 | |||||
タイトル | ||||||
タイトル | Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces | |||||
言語 | en | |||||
著者 |
Ando, Yuto
× Ando, Yuto× Nagamatsu, Kentaro× Deki, Manato× Taoka, Noriyuki× Tanaka, Atsushi× Nitta, Shugo× Honda, Yoshio× Nakamura, Tohru× Amano, Hiroshi |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | Copyright 2020 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in (Applied Physics Letters. v.117, n.10, 2020, p.102102) and may be found at (http://dx.doi.org/10.1063/5.0010774). | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Ni/Al2O3/GaN structures with vicinal GaN surfaces from the c- or m-plane were formed. Then, electrical interface properties of the structures were systematically investigated. It was found that interface state density (Dit) at the Al2O3/GaN interface for the c-plane is higher than that for the m-plane, and post-metallization annealing is quite effective to reduce Dit for both c- and m-planes. As a result, the low Dit value of ∼ 3 × 1010 eV−1 cm−2 was demonstrated for both planes. | |||||
言語 | en | |||||
出版者 | ||||||
出版者 | AIP Publishing | |||||
言語 | en | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
出版タイプ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1063/5.0010774 | |||||
ISSN(print) | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0003-6951 | |||||
書誌情報 |
en : Applied Physics Letters 巻 117, 号 10, p. 102102, 発行日 2020-09 |
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著者版フラグ | ||||||
値 | author |