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  1. F200 未来材料・システム研究所
  2. F200a 雑誌掲載論文
  3. 学術雑誌

Limitation of simple np-n tunnel junction based LEDs grown by metal-organic vapor phase epitaxy

http://hdl.handle.net/2237/00033519
http://hdl.handle.net/2237/00033519
779960f6-1bd7-4ada-99a1-5f083e51001c
名前 / ファイル ライセンス アクション
YR-Tunneljunction-manuscript-VF.pdf YR-Tunneljunction-manuscript-VF (1.1 MB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2021-02-10
タイトル
タイトル Limitation of simple np-n tunnel junction based LEDs grown by metal-organic vapor phase epitaxy
言語 en
著者 Robin, Y

× Robin, Y

WEKO 103475

en Robin, Y

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Bournet, Q

× Bournet, Q

WEKO 103476

en Bournet, Q

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Avit, G

× Avit, G

WEKO 103477

en Avit, G

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Pristovsek, M

× Pristovsek, M

WEKO 103478

en Pristovsek, M

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André, Y

× André, Y

WEKO 103479

en André, Y

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Trassoudaine, A

× Trassoudaine, A

WEKO 103480

en Trassoudaine, A

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Amano, H

× Amano, H

WEKO 103481

en Amano, H

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アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 This is the Accepted Manuscript version of an article accepted for publication in [Semiconductor Science and Technology].IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at [10.1088/1361-6641/abad73].
権利
言語 en
権利情報 “This Accepted Manuscript is available for reuse under a CC BY-NC-ND licence after the 12 month embargo period provided that all the terms of the licence are adhered to”
抄録
内容記述 We show evidence that tunnel junctions (TJs) in GaN grown by metal-organic vapor phase epitaxy are dominated by defect level-assisted tunneling. This is in contrast with the common belief that highly doped layers (>10^20 cm^−3) are required to narrow the TJ space charge region and promote the band-to-band tunneling. Our conclusion stems from the study and the review of the major doping limitations of carefully optimized p^++ and n^++ layers. The secondary ions mass spectroscopy profiles of GaN based TJ LEDs show a strong oxygen concentration located close to the p^++/n^++ interface, typical for three dimensional growth. In addition, considering the doping limitation asymmetry and Mg carry-over, our simulations indicate a depletion region of more than 10 nm which is buried in a rough and defective n^++ layer. However, decent electrical characteristics of the studied TJ based LEDs are obtained, with a low penalty voltage of 1.1 V and a specific differential resistance of about 10^–2 Ω.cm^2 at 20 mA. This indicates that a common TJ could be greatly optimized by using a moderate doping (~10^19 cm^−3) while intentionally introducing local defects within the TJ.
言語 en
内容記述タイプ Abstract
内容記述
内容記述 ファイル公開:2021-11-01
言語 ja
内容記述タイプ Other
出版者
言語 en
出版者 IOP publishing
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1088/1361-6641/abad73
ISSN(print)
収録物識別子タイプ PISSN
収録物識別子 0268-1242
書誌情報 en : Semiconductor Science and Technology

巻 35, 号 11, p. 115005, 発行日 2020-11
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