{"_buckets": {"deposit": "f8c4cd79-58b0-41b6-a5cd-3ef4d3ebc750"}, "_deposit": {"id": "31339", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "31339"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00031339"}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2020-11", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "11", "bibliographicPageStart": "115005", "bibliographicVolumeNumber": "35", "bibliographic_titles": [{"bibliographic_title": "Semiconductor Science and Technology"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "We show evidence that tunnel junctions (TJs) in GaN grown by metal-organic vapor phase epitaxy are dominated by defect level-assisted tunneling. This is in contrast with the common belief that highly doped layers (\u003e10^20 cm^\u22123) are required to narrow the TJ space charge region and promote the band-to-band tunneling. Our conclusion stems from the study and the review of the major doping limitations of carefully optimized p^++ and n^++ layers. The secondary ions mass spectroscopy profiles of GaN based TJ LEDs show a strong oxygen concentration located close to the p^++/n^++ interface, typical for three dimensional growth. In addition, considering the doping limitation asymmetry and Mg carry-over, our simulations indicate a depletion region of more than 10 nm which is buried in a rough and defective n^++ layer. However, decent electrical characteristics of the studied TJ based LEDs are obtained, with a low penalty voltage of 1.1 V and a specific differential resistance of about 10^\u20132 \u03a9.cm^2 at 20 mA. This indicates that a common TJ could be greatly optimized by using a moderate doping (~10^19 cm^\u22123) while intentionally introducing local defects within the TJ.", "subitem_description_type": "Abstract"}]}, "item_10_description_5": {"attribute_name": "\u5185\u5bb9\u8a18\u8ff0", "attribute_value_mlt": [{"subitem_description": "\u30d5\u30a1\u30a4\u30eb\u516c\u958b\uff1a2021-11-01", "subitem_description_type": "Other"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "IOP publishing"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1088/1361-6641/abad73", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "This is the Accepted Manuscript version of an article accepted for publication in [Semiconductor Science and Technology].IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it.\u202fThe Version of Record is available online at [10.1088/1361-6641/abad73]."}, {"subitem_rights": "\u201cThis Accepted Manuscript is available for reuse under a CC BY-NC-ND licence after the 12 month embargo period provided that all the terms of the licence are adhered to\u201d"}]}, "item_10_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_10_source_id_61": {"attribute_name": "ISSN\uff08print\uff09", "attribute_value_mlt": [{"subitem_source_identifier": "0268-1242", "subitem_source_identifier_type": "ISSN"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Robin, Y"}], "nameIdentifiers": [{"nameIdentifier": "103475", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Bournet, Q"}], "nameIdentifiers": [{"nameIdentifier": "103476", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Avit, G"}], "nameIdentifiers": [{"nameIdentifier": "103477", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Pristovsek, M"}], "nameIdentifiers": [{"nameIdentifier": "103478", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Andr\u00e9, Y"}], "nameIdentifiers": [{"nameIdentifier": "103479", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Trassoudaine, A"}], "nameIdentifiers": [{"nameIdentifier": "103480", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Amano, H"}], "nameIdentifiers": [{"nameIdentifier": "103481", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2021-11-01"}], "displaytype": "detail", "download_preview_message": "Download / Preview is available from 2021/11/1.", "file_order": 0, "filename": "YR-Tunneljunction-manuscript-VF.pdf", "filesize": [{"value": "1.1 MB"}], "format": "application/pdf", "future_date_message": "Download is available from 2021/11/1.", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 1100000.0, "url": {"label": "YR-Tunneljunction-manuscript-VF", "url": "https://nagoya.repo.nii.ac.jp/record/31339/files/YR-Tunneljunction-manuscript-VF.pdf"}, "version_id": "328fdebc-da92-4abb-97eb-7bcf1b567d18"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Limitation of simple np-n tunnel junction based LEDs grown by metal-organic vapor phase epitaxy", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Limitation of simple np-n tunnel junction based LEDs grown by metal-organic vapor phase epitaxy"}]}, "item_type_id": "10", "owner": "1", "path": ["673/674/675"], "permalink_uri": "http://hdl.handle.net/2237/00033519", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_name_i18n": "\u516c\u958b\u65e5", "attribute_value": "2021-02-10"}, "publish_date": "2021-02-10", "publish_status": "0", "recid": "31339", "relation": {}, "relation_version_is_last": true, "title": ["Limitation of simple np-n tunnel junction based LEDs grown by metal-organic vapor phase epitaxy"], "weko_shared_id": null}