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Structural characterization of GaN laterally overgrown on a (111)Si substrate
http://hdl.handle.net/2237/6985
http://hdl.handle.net/2237/69858aa65b6d-2160-4820-ab2b-ee216bfaa0b0
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
ApplPhysLett_79_955.pdf (284.9 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2006-10-19 | |||||
| タイトル | ||||||
| タイトル | Structural characterization of GaN laterally overgrown on a (111)Si substrate | |||||
| 言語 | en | |||||
| 著者 |
Tanaka, Shigeyasu
× Tanaka, Shigeyasu× Honda, Yoshio× Sawaki, Nobuhiko |
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| アクセス権 | ||||||
| アクセス権 | open access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
| 権利 | ||||||
| 言語 | en | |||||
| 権利情報 | Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Using transmission electron microscopy, we have characterized defect structures in laterally overgrown GaN crystals, grown directly on SiO_2 stripe-patterned (111)Si substrates by metalorganic vapor phase epitaxy using AlGaN as an intermediate layer. The width and the period of the stripe windows were nominally 1 and 2 μm, respectively. The average threading dislocation density for a completely coalesced 2-μm-thick GaN crystal obtained on the [112]-oriented stripe-patterned substrate was ～ 2*10^9 cm^{-2}. The reduction in threading dislocation density is a consequence of the lateral growth and dislocation reactions at the coalesced front of the mask. On the other hand, valleys and pits tend to remain on the mask during the growth on the [110]-oriented stripe-patterned substrate. Cracks were present in both crystals. | |||||
| 言語 | en | |||||
| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
| タイプ | journal article | |||||
| 出版タイプ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| DOI | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1063/1.1394716 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 0003-6951 | |||||
| 書誌情報 |
en : Applied Physics Letters 巻 79, 号 7, p. 955-957, 発行日 2001-08-13 |
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| フォーマット | ||||||
| 値 | application/pdf | |||||
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| 値 | publisher | |||||
| URI | ||||||
| 識別子 | http://hdl.handle.net/2237/6985 | |||||
| 識別子タイプ | HDL | |||||
