{"_buckets": {"deposit": "fba9c3bb-a4d6-47a4-9ab8-c5e2042991c4"}, "_deposit": {"id": "5390", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "5390"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00005390", "sets": ["322"]}, "author_link": ["13752", "13753", "13754", "13755", "13756", "13757"], "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2001-11-12", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "20", "bibliographicPageEnd": "3244", "bibliographicPageStart": "3242", "bibliographicVolumeNumber": "79", "bibliographic_titles": [{"bibliographic_title": "Applied Physics Letters", "bibliographic_titleLang": "en"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "The initial growth process of Si_{1-x-y}Ge_xC_y thin films on Si(001) surfaces is examined by scanning tunneling microscopy. The surface morphology of the film critically depends on the C fraction in the film. Evidence is presented on an atomic scale that the epitaxial growth of Si_{1-x-y}Ge_xC_y films with large C fractions is dominated by phase separation between Si–C and Si–Ge, concomitant with C condensation on the surface of the growing films. We find that the addition of a thin (1–2 ML) SiGe interlayer between the Si_{1-x-y}Ge_xC_y film and the Si substrate drastically improves the film structure, leading to a planar morphology even with large C fractions present in the film.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/6994"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics", "subitem_publisher_language": "en"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1063/1.1418447", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright (2001) American Institute of Physics. 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