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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Atomistic evolution of Si_{1–x–y}Ge_xC_y thin films on Si(001) surfaces

http://hdl.handle.net/2237/6994
http://hdl.handle.net/2237/6994
07b9e650-1abf-445d-acd1-891e45e9d2f2
名前 / ファイル ライセンス アクション
ApplPhysLett_79_3242.pdf ApplPhysLett_79_3242.pdf (392.4 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2006-10-20
タイトル
タイトル Atomistic evolution of Si_{1–x–y}Ge_xC_y thin films on Si(001) surfaces
言語 en
著者 Sakai, Akira

× Sakai, Akira

WEKO 13752

en Sakai, Akira

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Torige, Yuji

× Torige, Yuji

WEKO 13753

en Torige, Yuji

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Okada, Masahisa

× Okada, Masahisa

WEKO 13754

en Okada, Masahisa

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Ikeda, Hiroya

× Ikeda, Hiroya

WEKO 13755

en Ikeda, Hiroya

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Yasuda, Yukio

× Yasuda, Yukio

WEKO 13756

en Yasuda, Yukio

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Zaima, Shigeaki

× Zaima, Shigeaki

WEKO 13757

en Zaima, Shigeaki

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アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
抄録
内容記述 The initial growth process of Si_{1-x-y}Ge_xC_y thin films on Si(001) surfaces is examined by scanning tunneling microscopy. The surface morphology of the film critically depends on the C fraction in the film. Evidence is presented on an atomic scale that the epitaxial growth of Si_{1-x-y}Ge_xC_y films with large C fractions is dominated by phase separation between Si–C and Si–Ge, concomitant with C condensation on the surface of the growing films. We find that the addition of a thin (1–2 ML) SiGe interlayer between the Si_{1-x-y}Ge_xC_y film and the Si substrate drastically improves the film structure, leading to a planar morphology even with large C fractions present in the film.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 American Institute of Physics
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1063/1.1418447
ISSN
収録物識別子タイプ PISSN
収録物識別子 0003-6951
書誌情報 en : Applied Physics Letters

巻 79, 号 20, p. 3242-3244, 発行日 2001-11-12
フォーマット
application/pdf
著者版フラグ
値 publisher
URI
識別子 http://hdl.handle.net/2237/6994
識別子タイプ HDL
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