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Atomistic evolution of Si_{1–x–y}Ge_xC_y thin films on Si(001) surfaces
http://hdl.handle.net/2237/6994
http://hdl.handle.net/2237/699407b9e650-1abf-445d-acd1-891e45e9d2f2
名前 / ファイル | ライセンス | アクション |
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ApplPhysLett_79_3242.pdf (392.4 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2006-10-20 | |||||
タイトル | ||||||
タイトル | Atomistic evolution of Si_{1–x–y}Ge_xC_y thin films on Si(001) surfaces | |||||
言語 | en | |||||
著者 |
Sakai, Akira
× Sakai, Akira× Torige, Yuji× Okada, Masahisa× Ikeda, Hiroya× Yasuda, Yukio× Zaima, Shigeaki |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
抄録 | ||||||
内容記述 | The initial growth process of Si_{1-x-y}Ge_xC_y thin films on Si(001) surfaces is examined by scanning tunneling microscopy. The surface morphology of the film critically depends on the C fraction in the film. Evidence is presented on an atomic scale that the epitaxial growth of Si_{1-x-y}Ge_xC_y films with large C fractions is dominated by phase separation between Si–C and Si–Ge, concomitant with C condensation on the surface of the growing films. We find that the addition of a thin (1–2 ML) SiGe interlayer between the Si_{1-x-y}Ge_xC_y film and the Si substrate drastically improves the film structure, leading to a planar morphology even with large C fractions present in the film. | |||||
言語 | en | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | American Institute of Physics | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
出版タイプ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1063/1.1418447 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0003-6951 | |||||
書誌情報 |
en : Applied Physics Letters 巻 79, 号 20, p. 3242-3244, 発行日 2001-11-12 |
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フォーマット | ||||||
application/pdf | ||||||
著者版フラグ | ||||||
値 | publisher | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/6994 | |||||
識別子タイプ | HDL |