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Reduction of threading dislocation density in SiGe layers on Si (001) using a two-step strain–relaxation procedure
http://hdl.handle.net/2237/6996
http://hdl.handle.net/2237/6996d0fc8ea8-df98-4da0-87b0-ee3fa8fa7674
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
ApplPhysLett_79_3398.pdf (258.0 kB)
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| アイテムタイプ | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2006-10-20 | |||||
| タイトル | ||||||
| タイトル | Reduction of threading dislocation density in SiGe layers on Si (001) using a two-step strain–relaxation procedure | |||||
| 言語 | en | |||||
| 著者 |
Sakai, Akira
× Sakai, Akira× Sugimoto, Ken× Yamamoto, Takeo× Okada, Masahisa× Ikeda, Hiroya× Yasuda, Yukio× Zaima, Shigeaki |
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| アクセス権 | ||||||
| アクセス権 | open access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
| 権利 | ||||||
| 権利情報 | Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
| 言語 | en | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | A method to obtain high-quality strain–relaxed SiGe buffer layers on Si(001) substrates is presented. In this method, the strain relaxation of the SiGe layer is performed using a two-step procedure. Firstly, a low-temperature-grown SiGe layer, whose surface is covered by a thin Si cap layer, is thermally annealed. At this stage, the strain is incompletely relaxed and an atomically flat surface can be realized. Then, a second SiGe layer is grown on the first layer to achieve further strain relaxation. Transmission electron microscopy has clearly revealed that dislocations are dispersively introduced into the first SiGe/Si substrate interface and thus no pile up of dislocations occurs. The formation of a periodic undulation on the growth surface of the second SiGe layer is the key to inducing a drastic reduction in the threading dislocation density. | |||||
| 言語 | en | |||||
| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
| タイプ | journal article | |||||
| 出版タイプ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| DOI | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1063/1.1419037 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 0003-6951 | |||||
| 書誌情報 |
en : Applied Physics Letters 巻 79, 号 21, p. 3398-3400, 発行日 2001-11-19 |
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| フォーマット | ||||||
| 値 | application/pdf | |||||
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| 値 | publisher | |||||
| URI | ||||||
| 識別子 | http://hdl.handle.net/2237/6996 | |||||
| 識別子タイプ | HDL | |||||
