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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Reduction of threading dislocation density in SiGe layers on Si (001) using a two-step strain–relaxation procedure

http://hdl.handle.net/2237/6996
http://hdl.handle.net/2237/6996
d0fc8ea8-df98-4da0-87b0-ee3fa8fa7674
名前 / ファイル ライセンス アクション
ApplPhysLett_79_3398.pdf ApplPhysLett_79_3398.pdf (258.0 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2006-10-20
タイトル
タイトル Reduction of threading dislocation density in SiGe layers on Si (001) using a two-step strain–relaxation procedure
言語 en
著者 Sakai, Akira

× Sakai, Akira

WEKO 13758

en Sakai, Akira

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Sugimoto, Ken

× Sugimoto, Ken

WEKO 13759

en Sugimoto, Ken

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Yamamoto, Takeo

× Yamamoto, Takeo

WEKO 13760

en Yamamoto, Takeo

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Okada, Masahisa

× Okada, Masahisa

WEKO 13761

en Okada, Masahisa

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Ikeda, Hiroya

× Ikeda, Hiroya

WEKO 13762

en Ikeda, Hiroya

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Yasuda, Yukio

× Yasuda, Yukio

WEKO 13763

en Yasuda, Yukio

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Zaima, Shigeaki

× Zaima, Shigeaki

WEKO 13764

en Zaima, Shigeaki

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アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
抄録
内容記述 A method to obtain high-quality strain–relaxed SiGe buffer layers on Si(001) substrates is presented. In this method, the strain relaxation of the SiGe layer is performed using a two-step procedure. Firstly, a low-temperature-grown SiGe layer, whose surface is covered by a thin Si cap layer, is thermally annealed. At this stage, the strain is incompletely relaxed and an atomically flat surface can be realized. Then, a second SiGe layer is grown on the first layer to achieve further strain relaxation. Transmission electron microscopy has clearly revealed that dislocations are dispersively introduced into the first SiGe/Si substrate interface and thus no pile up of dislocations occurs. The formation of a periodic undulation on the growth surface of the second SiGe layer is the key to inducing a drastic reduction in the threading dislocation density.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 American Institute of Physics
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1063/1.1419037
ISSN
収録物識別子タイプ PISSN
収録物識別子 0003-6951
書誌情報 en : Applied Physics Letters

巻 79, 号 21, p. 3398-3400, 発行日 2001-11-19
フォーマット
application/pdf
著者版フラグ
値 publisher
URI
識別子 http://hdl.handle.net/2237/6996
識別子タイプ HDL
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