{"_buckets": {"deposit": "58509c34-7981-454c-ada5-a994bea2ec4c"}, "_deposit": {"id": "5391", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "5391"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00005391"}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2001-11-19", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "21", "bibliographicPageEnd": "3400", "bibliographicPageStart": "3398", "bibliographicVolumeNumber": "79", "bibliographic_titles": [{"bibliographic_title": "Applied Physics Letters"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "A method to obtain high-quality strain\u2013relaxed SiGe buffer layers on Si(001) substrates is\npresented. In this method, the strain relaxation of the SiGe layer is performed using a two-step\nprocedure. Firstly, a low-temperature-grown SiGe layer, whose surface is covered by a thin Si cap\nlayer, is thermally annealed. At this stage, the strain is incompletely relaxed and an atomically flat\nsurface can be realized. Then, a second SiGe layer is grown on the first layer to achieve further\nstrain relaxation. Transmission electron microscopy has clearly revealed that dislocations are\ndispersively introduced into the first SiGe/Si substrate interface and thus no pile up of dislocations\noccurs. The formation of a periodic undulation on the growth surface of the second SiGe layer is the\nkey to inducing a drastic reduction in the threading dislocation density.", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/6996"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "http://dx.doi.org/10.1063/1.1419037", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics."}]}, "item_10_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0003-6951", "subitem_source_identifier_type": "ISSN"}]}, "item_10_text_14": {"attribute_name": "\u30d5\u30a9\u30fc\u30de\u30c3\u30c8", "attribute_value_mlt": [{"subitem_text_value": "application/pdf"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Sakai, Akira"}], "nameIdentifiers": [{"nameIdentifier": "13758", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Sugimoto, Ken"}], "nameIdentifiers": [{"nameIdentifier": "13759", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yamamoto, Takeo"}], "nameIdentifiers": [{"nameIdentifier": "13760", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Okada, Masahisa"}], "nameIdentifiers": [{"nameIdentifier": "13761", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ikeda, Hiroya"}], "nameIdentifiers": [{"nameIdentifier": "13762", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yasuda, Yukio"}], "nameIdentifiers": [{"nameIdentifier": "13763", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Zaima, Shigeaki"}], "nameIdentifiers": [{"nameIdentifier": "13764", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-19"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "ApplPhysLett_79_3398.pdf", "filesize": [{"value": "258.0 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 258000.0, "url": {"label": "ApplPhysLett_79_3398.pdf", "url": "https://nagoya.repo.nii.ac.jp/record/5391/files/ApplPhysLett_79_3398.pdf"}, "version_id": "c29ea8e3-837b-4d3a-9614-ab2f801e353a"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Reduction of threading dislocation density in SiGe layers on Si (001) using a two-step strain\u2013relaxation procedure", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Reduction of threading dislocation density in SiGe layers on Si (001) using a two-step strain\u2013relaxation procedure"}]}, "item_type_id": "10", "owner": "1", "path": ["320/321/322"], "permalink_uri": "http://hdl.handle.net/2237/6996", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_name_i18n": "\u516c\u958b\u65e5", "attribute_value": "2006-10-20"}, "publish_date": "2006-10-20", "publish_status": "0", "recid": "5391", "relation": {}, "relation_version_is_last": true, "title": ["Reduction of threading dislocation density in SiGe layers on Si (001) using a two-step strain\u2013relaxation procedure"], "weko_shared_id": 3}