{"_buckets": {"deposit": "58509c34-7981-454c-ada5-a994bea2ec4c"}, "_deposit": {"id": "5391", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "5391"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00005391", "sets": ["322"]}, "author_link": ["13758", "13759", "13760", "13761", "13762", "13763", "13764"], "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2001-11-19", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "21", "bibliographicPageEnd": "3400", "bibliographicPageStart": "3398", "bibliographicVolumeNumber": "79", "bibliographic_titles": [{"bibliographic_title": "Applied Physics Letters", "bibliographic_titleLang": "en"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "A method to obtain high-quality strain–relaxed SiGe buffer layers on Si(001) substrates is presented. In this method, the strain relaxation of the SiGe layer is performed using a two-step procedure. Firstly, a low-temperature-grown SiGe layer, whose surface is covered by a thin Si cap layer, is thermally annealed. At this stage, the strain is incompletely relaxed and an atomically flat surface can be realized. Then, a second SiGe layer is grown on the first layer to achieve further strain relaxation. Transmission electron microscopy has clearly revealed that dislocations are dispersively introduced into the first SiGe/Si substrate interface and thus no pile up of dislocations occurs. The formation of a periodic undulation on the growth surface of the second SiGe layer is the key to inducing a drastic reduction in the threading dislocation density.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/6996"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics", "subitem_publisher_language": "en"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1063/1.1419037", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.", "subitem_rights_language": "en"}]}, "item_10_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0003-6951", "subitem_source_identifier_type": "PISSN"}]}, "item_10_text_14": {"attribute_name": "フォーマット", "attribute_value_mlt": [{"subitem_text_value": "application/pdf"}]}, "item_1615787544753": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Sakai, Akira", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13758", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Sugimoto, Ken", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13759", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yamamoto, Takeo", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13760", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Okada, Masahisa", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13761", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ikeda, Hiroya", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13762", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yasuda, Yukio", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13763", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Zaima, Shigeaki", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13764", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-19"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "ApplPhysLett_79_3398.pdf", "filesize": [{"value": "258.0 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 258000.0, "url": {"label": "ApplPhysLett_79_3398.pdf", "objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/5391/files/ApplPhysLett_79_3398.pdf"}, "version_id": "c29ea8e3-837b-4d3a-9614-ab2f801e353a"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Reduction of threading dislocation density in SiGe layers on Si (001) using a two-step strain–relaxation procedure", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Reduction of threading dislocation density in SiGe layers on Si (001) using a two-step strain–relaxation procedure", "subitem_title_language": "en"}]}, "item_type_id": "10", "owner": "1", "path": ["322"], "permalink_uri": "http://hdl.handle.net/2237/6996", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2006-10-20"}, "publish_date": "2006-10-20", "publish_status": "0", "recid": "5391", "relation": {}, "relation_version_is_last": true, "title": ["Reduction of threading dislocation density in SiGe layers on Si (001) using a two-step strain–relaxation procedure"], "weko_shared_id": -1}