{"_buckets": {"deposit": "c40f671f-a728-474b-8f29-3bf448ebcdee"}, "_deposit": {"id": "5409", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "5409"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00005409", "sets": ["322"]}, "author_link": ["13850", "13851", "13852", "13853"], "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2005-02-14", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "7", "bibliographicPageEnd": "073105", "bibliographicPageStart": "073105", "bibliographicVolumeNumber": "86", "bibliographic_titles": [{"bibliographic_title": "Applied Physics Letters", "bibliographic_titleLang": "en"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "We have fabricated n-type carbon nanotube field effect transistors by choosing the contact metal. Single-walled carbon nanotubes were grown directly on a SiO_2 /Si substrate by chemical vapor deposition using patterned metal catalysts. Following the nanotube growth, Ca contacts with a small work function were formed by evaporating and lifting off the metal. The devices showed n-type transfer characteristics without any doping into the nanotube channel. In contrast, the devices with Pd contacts showed p-type conduction. These results can be explained by taking into account the work functions of the contact metals.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/7014"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics", "subitem_publisher_language": "en"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1063/1.1865343", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.", "subitem_rights_language": "en"}]}, "item_10_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0003-6951", "subitem_source_identifier_type": "PISSN"}]}, "item_10_text_14": {"attribute_name": "フォーマット", "attribute_value_mlt": [{"subitem_text_value": "application/pdf"}]}, "item_1615787544753": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Nosho, Yosuke", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13850", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ohno, Yutaka", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13851", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kishimoto, Shigeru", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13852", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Mizutani, Takashi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13853", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-19"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "ApplPhysLett_86_073105.pdf", "filesize": [{"value": "128.8 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 128800.00000000001, "url": {"label": "ApplPhysLett_86_073105.pdf", "objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/5409/files/ApplPhysLett_86_073105.pdf"}, "version_id": "1ab2af51-6b5d-4864-b324-3afa3177edab"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "n-type carbon nanotube field-effect transistors fabricated by using Ca contact electrodes", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "n-type carbon nanotube field-effect transistors fabricated by using Ca contact electrodes", "subitem_title_language": "en"}]}, "item_type_id": "10", "owner": "1", "path": ["322"], "permalink_uri": "http://hdl.handle.net/2237/7014", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2006-10-23"}, "publish_date": "2006-10-23", "publish_status": "0", "recid": "5409", "relation": {}, "relation_version_is_last": true, "title": ["n-type carbon nanotube field-effect transistors fabricated by using Ca contact electrodes"], "weko_shared_id": -1}