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n-type carbon nanotube field-effect transistors fabricated by using Ca contact electrodes
http://hdl.handle.net/2237/7014
http://hdl.handle.net/2237/701435d8b51d-226e-4a1a-8612-5babc1398377
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
ApplPhysLett_86_073105.pdf (128.8 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2006-10-23 | |||||
| タイトル | ||||||
| タイトル | n-type carbon nanotube field-effect transistors fabricated by using Ca contact electrodes | |||||
| 言語 | en | |||||
| 著者 |
Nosho, Yosuke
× Nosho, Yosuke× Ohno, Yutaka× Kishimoto, Shigeru× Mizutani, Takashi |
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| アクセス権 | ||||||
| アクセス権 | open access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
| 権利 | ||||||
| 言語 | en | |||||
| 権利情報 | Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | We have fabricated n-type carbon nanotube field effect transistors by choosing the contact metal. Single-walled carbon nanotubes were grown directly on a SiO_2 /Si substrate by chemical vapor deposition using patterned metal catalysts. Following the nanotube growth, Ca contacts with a small work function were formed by evaporating and lifting off the metal. The devices showed n-type transfer characteristics without any doping into the nanotube channel. In contrast, the devices with Pd contacts showed p-type conduction. These results can be explained by taking into account the work functions of the contact metals. | |||||
| 言語 | en | |||||
| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| 出版タイプ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| DOI | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1063/1.1865343 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 0003-6951 | |||||
| 書誌情報 |
en : Applied Physics Letters 巻 86, 号 7, p. 073105-073105, 発行日 2005-02-14 |
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| フォーマット | ||||||
| 値 | application/pdf | |||||
| 著者版フラグ | ||||||
| 値 | publisher | |||||
| URI | ||||||
| 識別子 | http://hdl.handle.net/2237/7014 | |||||
| 識別子タイプ | HDL | |||||
