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n-type carbon nanotube field-effect transistors fabricated by using Ca contact electrodes
http://hdl.handle.net/2237/7014
35d8b51d-226e-4a1a-8612-5babc1398377
名前 / ファイル | ライセンス | アクション | |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2006-10-23 | |||||
タイトル | ||||||
タイトル | n-type carbon nanotube field-effect transistors fabricated by using Ca contact electrodes | |||||
著者 |
Nosho, Yosuke
× Nosho, Yosuke× Ohno, Yutaka× Kishimoto, Shigeru× Mizutani, Takashi |
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権利 | ||||||
権利情報 | Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
抄録 | ||||||
内容記述 | We have fabricated n-type carbon nanotube field effect transistors by choosing the contact metal. Single-walled carbon nanotubes were grown directly on a SiO_2 /Si substrate by chemical vapor deposition using patterned metal catalysts. Following the nanotube growth, Ca contacts with a small work function were formed by evaporating and lifting off the metal. The devices showed n-type transfer characteristics without any doping into the nanotube channel. In contrast, the devices with Pd contacts showed p-type conduction. These results can be explained by taking into account the work functions of the contact metals. | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
出版者 | American Institute of Physics | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
DOI | ||||||
関連識別子 | ||||||
識別子タイプ | DOI | |||||
関連識別子 | http://dx.doi.org/10.1063/1.1865343 | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0003-6951 | |||||
書誌情報 |
Applied Physics Letters 巻 86, 号 7, p. 073105-073105, 発行日 2005-02-14 |
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フォーマット | ||||||
application/pdf | ||||||
著者版フラグ | ||||||
値 | publisher | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/7014 | |||||
識別子タイプ | HDL |