ログイン
言語:

WEKO3

  • トップ
  • ランキング
To
lat lon distance
To

Field does not validate



インデックスリンク

インデックスツリー

メールアドレスを入力してください。

WEKO

One fine body…

WEKO

One fine body…

アイテム

{"_buckets": {"deposit": "1cbe046a-33ea-4197-9823-ddc4ff91cfdd"}, "_deposit": {"id": "5410", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "5410"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00005410", "sets": ["322"]}, "author_link": ["13854", "13855", "13856", "13857", "13858"], "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2005-05-30", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "22", "bibliographicPageEnd": "221916", "bibliographicPageStart": "221916", "bibliographicVolumeNumber": "86", "bibliographic_titles": [{"bibliographic_title": "Applied Physics Letters", "bibliographic_titleLang": "en"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "We have grown strain-relaxed SiGe layers on Sis001d substrates with a pure-edge dislocation network buried at the heterointerface and analyzed dislocation morphology depending on growth conditions. The process employed here consists of pure-Ge film growth on Si(001) and subsequent high temperature annealing for solid-phase intermixing of the Ge film and Si deposited on the top to form a SiGe alloy layer. Transmission electron microscopy revealed morphological changes of shorter pure-edge dislocation segments initially formed at the Ge/Si interface into a network structure consisting of longer and regularly spaced dislocations during post-deposition annealing. The dislocation network was explicitly preserved even after the intermixing of Si and Ge and predominantly contributed to in-plane strain relaxation of the SiGe layer. Applicability of the pure-edge dislocation network to strain-relaxed SiGe buffer layers on Si(001) substrates is discussed.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/7015"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics", "subitem_publisher_language": "en"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1063/1.1943493", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.", "subitem_rights_language": "en"}]}, "item_10_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0003-6951", "subitem_source_identifier_type": "PISSN"}]}, "item_10_text_14": {"attribute_name": "フォーマット", "attribute_value_mlt": [{"subitem_text_value": "application/pdf"}]}, "item_1615787544753": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Sakai, Akira", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13854", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Taoka, Noriyuki", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13855", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Nakatsuka, Osamu", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13856", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Zaima, Shigeaki", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13857", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yasuda, Yukio", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13858", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-19"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "ApplPhysLett_86_221916.pdf", "filesize": [{"value": "202.4 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 202400.0, "url": {"label": "ApplPhysLett_86_221916.pdf", "objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/5410/files/ApplPhysLett_86_221916.pdf"}, "version_id": "79b6a3e1-d3b3-4450-b775-128fbb0c3fb1"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Pure-edge dislocation network for strain-relaxed SiGe/Si(001) systems", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Pure-edge dislocation network for strain-relaxed SiGe/Si(001) systems", "subitem_title_language": "en"}]}, "item_type_id": "10", "owner": "1", "path": ["322"], "permalink_uri": "http://hdl.handle.net/2237/7015", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2006-10-23"}, "publish_date": "2006-10-23", "publish_status": "0", "recid": "5410", "relation": {}, "relation_version_is_last": true, "title": ["Pure-edge dislocation network for strain-relaxed SiGe/Si(001) systems"], "weko_shared_id": -1}
  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Pure-edge dislocation network for strain-relaxed SiGe/Si(001) systems

http://hdl.handle.net/2237/7015
http://hdl.handle.net/2237/7015
71f87ab9-f4e4-4d6c-8bfb-a8b2a86c90dc
名前 / ファイル ライセンス アクション
ApplPhysLett_86_221916.pdf ApplPhysLett_86_221916.pdf (202.4 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2006-10-23
タイトル
タイトル Pure-edge dislocation network for strain-relaxed SiGe/Si(001) systems
言語 en
著者 Sakai, Akira

× Sakai, Akira

WEKO 13854

en Sakai, Akira

Search repository
Taoka, Noriyuki

× Taoka, Noriyuki

WEKO 13855

en Taoka, Noriyuki

Search repository
Nakatsuka, Osamu

× Nakatsuka, Osamu

WEKO 13856

en Nakatsuka, Osamu

Search repository
Zaima, Shigeaki

× Zaima, Shigeaki

WEKO 13857

en Zaima, Shigeaki

Search repository
Yasuda, Yukio

× Yasuda, Yukio

WEKO 13858

en Yasuda, Yukio

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
抄録
内容記述 We have grown strain-relaxed SiGe layers on Sis001d substrates with a pure-edge dislocation network buried at the heterointerface and analyzed dislocation morphology depending on growth conditions. The process employed here consists of pure-Ge film growth on Si(001) and subsequent high temperature annealing for solid-phase intermixing of the Ge film and Si deposited on the top to form a SiGe alloy layer. Transmission electron microscopy revealed morphological changes of shorter pure-edge dislocation segments initially formed at the Ge/Si interface into a network structure consisting of longer and regularly spaced dislocations during post-deposition annealing. The dislocation network was explicitly preserved even after the intermixing of Si and Ge and predominantly contributed to in-plane strain relaxation of the SiGe layer. Applicability of the pure-edge dislocation network to strain-relaxed SiGe buffer layers on Si(001) substrates is discussed.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 American Institute of Physics
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1063/1.1943493
ISSN
収録物識別子タイプ PISSN
収録物識別子 0003-6951
書誌情報 en : Applied Physics Letters

巻 86, 号 22, p. 221916-221916, 発行日 2005-05-30
フォーマット
application/pdf
著者版フラグ
値 publisher
URI
識別子 http://hdl.handle.net/2237/7015
識別子タイプ HDL
戻る
0
views
See details
Views

Versions

Ver.1 2021-03-01 13:12:14.394343
Show All versions

Share

Mendeley Twitter Facebook Print Addthis

Cite as

エクスポート

OAI-PMH
  • OAI-PMH JPCOAR
  • OAI-PMH DublinCore
  • OAI-PMH DDI
Other Formats
  • JSON
  • BIBTEX

Confirm


Powered by WEKO3


Powered by WEKO3