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Pure-edge dislocation network for strain-relaxed SiGe/Si(001) systems
http://hdl.handle.net/2237/7015
71f87ab9-f4e4-4d6c-8bfb-a8b2a86c90dc
名前 / ファイル | ライセンス | アクション | |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2006-10-23 | |||||
タイトル | ||||||
タイトル | Pure-edge dislocation network for strain-relaxed SiGe/Si(001) systems | |||||
著者 |
Sakai, Akira
× Sakai, Akira× Taoka, Noriyuki× Nakatsuka, Osamu× Zaima, Shigeaki× Yasuda, Yukio |
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権利 | ||||||
権利情報 | Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
抄録 | ||||||
内容記述 | We have grown strain-relaxed SiGe layers on Sis001d substrates with a pure-edge dislocation network buried at the heterointerface and analyzed dislocation morphology depending on growth conditions. The process employed here consists of pure-Ge film growth on Si(001) and subsequent high temperature annealing for solid-phase intermixing of the Ge film and Si deposited on the top to form a SiGe alloy layer. Transmission electron microscopy revealed morphological changes of shorter pure-edge dislocation segments initially formed at the Ge/Si interface into a network structure consisting of longer and regularly spaced dislocations during post-deposition annealing. The dislocation network was explicitly preserved even after the intermixing of Si and Ge and predominantly contributed to in-plane strain relaxation of the SiGe layer. Applicability of the pure-edge dislocation network to strain-relaxed SiGe buffer layers on Si(001) substrates is discussed. | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
出版者 | American Institute of Physics | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
DOI | ||||||
関連識別子 | ||||||
識別子タイプ | DOI | |||||
関連識別子 | http://dx.doi.org/10.1063/1.1943493 | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0003-6951 | |||||
書誌情報 |
Applied Physics Letters 巻 86, 号 22, p. 221916-221916, 発行日 2005-05-30 |
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application/pdf | ||||||
著者版フラグ | ||||||
値 | publisher | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/7015 | |||||
識別子タイプ | HDL |