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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Pure-edge dislocation network for strain-relaxed SiGe/Si(001) systems

http://hdl.handle.net/2237/7015
71f87ab9-f4e4-4d6c-8bfb-a8b2a86c90dc
名前 / ファイル ライセンス アクション
ApplPhysLett_86_221916.pdf ApplPhysLett_86_221916.pdf (202.4 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2006-10-23
タイトル
タイトル Pure-edge dislocation network for strain-relaxed SiGe/Si(001) systems
著者 Sakai, Akira

× Sakai, Akira

WEKO 13854

Sakai, Akira

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Taoka, Noriyuki

× Taoka, Noriyuki

WEKO 13855

Taoka, Noriyuki

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Nakatsuka, Osamu

× Nakatsuka, Osamu

WEKO 13856

Nakatsuka, Osamu

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Zaima, Shigeaki

× Zaima, Shigeaki

WEKO 13857

Zaima, Shigeaki

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Yasuda, Yukio

× Yasuda, Yukio

WEKO 13858

Yasuda, Yukio

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権利
権利情報 Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
抄録
内容記述 We have grown strain-relaxed SiGe layers on Sis001d substrates with a pure-edge dislocation network buried at the heterointerface and analyzed dislocation morphology depending on growth conditions. The process employed here consists of pure-Ge film growth on Si(001) and subsequent high temperature annealing for solid-phase intermixing of the Ge film and Si deposited on the top to form a SiGe alloy layer. Transmission electron microscopy revealed morphological changes of shorter pure-edge dislocation segments initially formed at the Ge/Si interface into a network structure consisting of longer and regularly spaced dislocations during post-deposition annealing. The dislocation network was explicitly preserved even after the intermixing of Si and Ge and predominantly contributed to in-plane strain relaxation of the SiGe layer. Applicability of the pure-edge dislocation network to strain-relaxed SiGe buffer layers on Si(001) substrates is discussed.
内容記述タイプ Abstract
出版者
出版者 American Institute of Physics
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
DOI
関連識別子
識別子タイプ DOI
関連識別子 http://dx.doi.org/10.1063/1.1943493
ISSN
収録物識別子タイプ ISSN
収録物識別子 0003-6951
書誌情報 Applied Physics Letters

巻 86, 号 22, p. 221916-221916, 発行日 2005-05-30
フォーマット
application/pdf
著者版フラグ
値 publisher
URI
識別子 http://hdl.handle.net/2237/7015
識別子タイプ HDL
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