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Pure-edge dislocation network for strain-relaxed SiGe/Si(001) systems
http://hdl.handle.net/2237/7015
http://hdl.handle.net/2237/701571f87ab9-f4e4-4d6c-8bfb-a8b2a86c90dc
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
ApplPhysLett_86_221916.pdf (202.4 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2006-10-23 | |||||
| タイトル | ||||||
| タイトル | Pure-edge dislocation network for strain-relaxed SiGe/Si(001) systems | |||||
| 言語 | en | |||||
| 著者 |
Sakai, Akira
× Sakai, Akira× Taoka, Noriyuki× Nakatsuka, Osamu× Zaima, Shigeaki× Yasuda, Yukio |
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| アクセス権 | ||||||
| アクセス権 | open access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
| 権利 | ||||||
| 言語 | en | |||||
| 権利情報 | Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | We have grown strain-relaxed SiGe layers on Sis001d substrates with a pure-edge dislocation network buried at the heterointerface and analyzed dislocation morphology depending on growth conditions. The process employed here consists of pure-Ge film growth on Si(001) and subsequent high temperature annealing for solid-phase intermixing of the Ge film and Si deposited on the top to form a SiGe alloy layer. Transmission electron microscopy revealed morphological changes of shorter pure-edge dislocation segments initially formed at the Ge/Si interface into a network structure consisting of longer and regularly spaced dislocations during post-deposition annealing. The dislocation network was explicitly preserved even after the intermixing of Si and Ge and predominantly contributed to in-plane strain relaxation of the SiGe layer. Applicability of the pure-edge dislocation network to strain-relaxed SiGe buffer layers on Si(001) substrates is discussed. | |||||
| 言語 | en | |||||
| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| 出版タイプ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| DOI | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1063/1.1943493 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 0003-6951 | |||||
| 書誌情報 |
en : Applied Physics Letters 巻 86, 号 22, p. 221916-221916, 発行日 2005-05-30 |
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| フォーマット | ||||||
| 値 | application/pdf | |||||
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| 値 | publisher | |||||
| URI | ||||||
| 識別子 | http://hdl.handle.net/2237/7015 | |||||
| 識別子タイプ | HDL | |||||
