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Ultrathin fluorinated silicon nitride gate dielectric films formed by remote plasma enhanced chemical vapor deposition employing NH_3 and SiF_4
http://hdl.handle.net/2237/7040
http://hdl.handle.net/2237/70401fdcabfa-0296-4812-80ba-32a5cc56c08c
名前 / ファイル | ライセンス | アクション |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2006-10-24 | |||||
タイトル | ||||||
タイトル | Ultrathin fluorinated silicon nitride gate dielectric films formed by remote plasma enhanced chemical vapor deposition employing NH_3 and SiF_4 | |||||
言語 | en | |||||
著者 |
Ohta, Hiroyuki
× Ohta, Hiroyuki× Hori, Masaru× Goto, Toshio |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
抄録 | ||||||
内容記述 | Ultrathin fluorinated silicon nitride (SiN_x) films of 4 nm in thickness were formed on a Si substrate at 350 ℃ in the downflow of electron cyclotron resonance plasma-enhanced chemical vapor deposition employing ammonia and tetrafluorosilane (NH_3 /SiF_4) gases. Ultrathin fluorinated SiN_x film was evaluated for use as a gate dielectric film. The observed properties indicated an extremely low leakage current, one order of magnitude lower than thermal SiO_2 of identical equivalent oxide thickness, as well as an excellent hysteresis loop (20 mV) and interface trap density (D_it=4 *10^11 cm^-2) in the capacitance–voltage characteristics. The film structures and the surface reactions for the fluorinated SiN_x film formation were examined via in situ x-ray photoelectron spectroscopy. in situ Fourier-transform infrared reflection absorption spectroscopy, in situ atomic force microscopy, and thermal desorption mass spectroscopy. The control of the fluorine concentration in the SiN_x films was found to be a key factor in the formation of fluorinated SiN_x films of high quality at low temperatures. Fluorinated SiN_x is the effective material for application in ultrathin gate dielectric film in ultralarge-scale integrated circuits. | |||||
言語 | en | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | American Institute of Physics | |||||
言語 | ||||||
言語 | eng | |||||
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資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
出版タイプ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1063/1.1381556 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0021-8979 | |||||
書誌情報 |
en : Journal of Applied Physics 巻 90, 号 4, p. 1955-1961, 発行日 2001-08-15 |
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application/pdf | ||||||
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値 | publisher | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/7040 | |||||
識別子タイプ | HDL |