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{"_buckets": {"deposit": "c234b209-fd5a-4953-9553-37038090356c"}, "_deposit": {"id": "5436", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "5436"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00005436", "sets": ["322"]}, "author_link": ["13959", "13960", "13961"], "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2001-08-15", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "4", "bibliographicPageEnd": "1961", "bibliographicPageStart": "1955", "bibliographicVolumeNumber": "90", "bibliographic_titles": [{"bibliographic_title": "Journal of Applied Physics", "bibliographic_titleLang": "en"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "Ultrathin fluorinated silicon nitride (SiN_x) films of 4 nm in thickness were formed on a Si substrate at 350 ℃ in the downflow of electron cyclotron resonance plasma-enhanced chemical vapor deposition employing ammonia and tetrafluorosilane (NH_3 /SiF_4) gases. Ultrathin fluorinated SiN_x film was evaluated for use as a gate dielectric film. The observed properties indicated an extremely low leakage current, one order of magnitude lower than thermal SiO_2 of identical equivalent oxide thickness, as well as an excellent hysteresis loop (20 mV) and interface trap density (D_it=4 *10^11 cm^-2) in the capacitance–voltage characteristics. The film structures and the surface reactions for the fluorinated SiN_x film formation were examined via in situ x-ray photoelectron spectroscopy. in situ Fourier-transform infrared reflection absorption spectroscopy, in situ atomic force microscopy, and thermal desorption mass spectroscopy. The control of the fluorine concentration in the SiN_x films was found to be a key factor in the formation of fluorinated SiN_x films of high quality at low temperatures. Fluorinated SiN_x is the effective material for application in ultrathin gate dielectric film in ultralarge-scale integrated circuits.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/7040"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics", "subitem_publisher_language": "en"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1063/1.1381556", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.", "subitem_rights_language": "en"}]}, "item_10_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0021-8979", "subitem_source_identifier_type": "PISSN"}]}, "item_10_text_14": {"attribute_name": "フォーマット", "attribute_value_mlt": [{"subitem_text_value": "application/pdf"}]}, "item_1615787544753": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Ohta, Hiroyuki", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13959", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hori, Masaru", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13960", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Goto, Toshio", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13961", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-19"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "JApplPhys_90_1955.pdf", "filesize": [{"value": "120.7 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 120700.0, "url": {"label": "JApplPhys_90_1955.pdf", "objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/5436/files/JApplPhys_90_1955.pdf"}, "version_id": "f67f5f07-8e34-473a-8a03-92245d62c433"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Ultrathin fluorinated silicon nitride gate dielectric films formed by remote plasma enhanced chemical vapor deposition employing NH_3 and SiF_4", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Ultrathin fluorinated silicon nitride gate dielectric films formed by remote plasma enhanced chemical vapor deposition employing NH_3 and SiF_4", "subitem_title_language": "en"}]}, "item_type_id": "10", "owner": "1", "path": ["322"], "permalink_uri": "http://hdl.handle.net/2237/7040", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2006-10-24"}, "publish_date": "2006-10-24", "publish_status": "0", "recid": "5436", "relation": {}, "relation_version_is_last": true, "title": ["Ultrathin fluorinated silicon nitride gate dielectric films formed by remote plasma enhanced chemical vapor deposition employing NH_3 and SiF_4"], "weko_shared_id": -1}
Ultrathin fluorinated silicon nitride gate dielectric films formed by remote plasma enhanced chemical vapor deposition employing NH_3 and SiF_4
http://hdl.handle.net/2237/7040
http://hdl.handle.net/2237/70401fdcabfa-0296-4812-80ba-32a5cc56c08c
名前 / ファイル | ライセンス | アクション |
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JApplPhys_90_1955.pdf (120.7 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2006-10-24 | |||||
タイトル | ||||||
タイトル | Ultrathin fluorinated silicon nitride gate dielectric films formed by remote plasma enhanced chemical vapor deposition employing NH_3 and SiF_4 | |||||
言語 | en | |||||
著者 |
Ohta, Hiroyuki
× Ohta, Hiroyuki× Hori, Masaru× Goto, Toshio |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
抄録 | ||||||
内容記述 | Ultrathin fluorinated silicon nitride (SiN_x) films of 4 nm in thickness were formed on a Si substrate at 350 ℃ in the downflow of electron cyclotron resonance plasma-enhanced chemical vapor deposition employing ammonia and tetrafluorosilane (NH_3 /SiF_4) gases. Ultrathin fluorinated SiN_x film was evaluated for use as a gate dielectric film. The observed properties indicated an extremely low leakage current, one order of magnitude lower than thermal SiO_2 of identical equivalent oxide thickness, as well as an excellent hysteresis loop (20 mV) and interface trap density (D_it=4 *10^11 cm^-2) in the capacitance–voltage characteristics. The film structures and the surface reactions for the fluorinated SiN_x film formation were examined via in situ x-ray photoelectron spectroscopy. in situ Fourier-transform infrared reflection absorption spectroscopy, in situ atomic force microscopy, and thermal desorption mass spectroscopy. The control of the fluorine concentration in the SiN_x films was found to be a key factor in the formation of fluorinated SiN_x films of high quality at low temperatures. Fluorinated SiN_x is the effective material for application in ultrathin gate dielectric film in ultralarge-scale integrated circuits. | |||||
言語 | en | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | American Institute of Physics | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
出版タイプ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1063/1.1381556 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0021-8979 | |||||
書誌情報 |
en : Journal of Applied Physics 巻 90, 号 4, p. 1955-1961, 発行日 2001-08-15 |
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フォーマット | ||||||
application/pdf | ||||||
著者版フラグ | ||||||
値 | publisher | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/7040 | |||||
識別子タイプ | HDL |