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Role of atomic nitrogen during GaN growth by plasma-assisted molecular beam epitaxy revealed by appearance mass spectrometry
http://hdl.handle.net/2237/8775
http://hdl.handle.net/2237/877581542b28-31ca-4775-b607-cf79c5561d12
名前 / ファイル | ライセンス | アクション |
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AppPhysLett_90-172114.pdf (74.6 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2007-09-25 | |||||
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タイトル | Role of atomic nitrogen during GaN growth by plasma-assisted molecular beam epitaxy revealed by appearance mass spectrometry | |||||
言語 | en | |||||
著者 |
Osaka, J.
× Osaka, J.× Kumar, Senthil M.× Toyoda, H.× Ishijima, T.× Sugai, H.× Mizutani, T. |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | Copyright (2007) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
抄録 | ||||||
内容記述 | To identify the species which contribute to GaN growth, the authors investigated the discharge parameter (0.3–4.8 SCCM (SCCM denotes cubic centimeter per minute at STP), 150–400 W) dependences of the atomic N flux by appearance mass spectrometry and of the incorporated nitrogen atoms into GaN layers grown by plasma-assisted molecular beam epitaxy (PAMBE) using the rf-plasma source. Ion fluxes were also evaluated by ion current measurements. A good correlation between the supplied atomic N flux and the incorporated nitrogen flux was obtained under a wide range of plasma conditions. It was clarified that the atomic N plays a dominant role in the growth of GaN by PAMBE. | |||||
言語 | en | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | American Institute of Physics | |||||
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言語 | eng | |||||
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資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
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出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1063/1.2734390 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0003-6951 | |||||
書誌情報 |
en : APPLIED PHYSICS LETTERS 巻 90, 号 17, p. 172114-172114, 発行日 2007-04-23 |
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application/pdf | ||||||
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値 | publisher | |||||
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識別子 | http://hdl.handle.net/2237/8775 | |||||
識別子タイプ | HDL |