{"_buckets": {"deposit": "ca346781-6bba-417b-b810-5f8bab124a7f"}, "_deposit": {"id": "7101", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "7101"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00007101"}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2007-04-23", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "17", "bibliographicPageEnd": "172114", "bibliographicPageStart": "172114", "bibliographicVolumeNumber": "90", "bibliographic_titles": [{"bibliographic_title": "APPLIED PHYSICS LETTERS"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "To identify the species which contribute to GaN growth, the authors investigated the discharge parameter (0.3\u20134.8 SCCM (SCCM denotes cubic centimeter per minute at STP), 150\u2013400 W) dependences of the atomic N flux by appearance mass spectrometry and of the incorporated nitrogen atoms into GaN layers grown by plasma-assisted molecular beam epitaxy (PAMBE) using the rf-plasma source. Ion fluxes were also evaluated by ion current measurements. A good correlation between the supplied atomic N flux and the incorporated nitrogen flux was obtained under a wide range of plasma conditions. It was clarified that the atomic N plays a dominant role in the growth of GaN by PAMBE.", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/8775"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "http://dx.doi.org/10.1063/1.2734390", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "Copyright (2007) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics."}]}, "item_10_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0003-6951", "subitem_source_identifier_type": "ISSN"}]}, "item_10_text_14": {"attribute_name": "\u30d5\u30a9\u30fc\u30de\u30c3\u30c8", "attribute_value_mlt": [{"subitem_text_value": "application/pdf"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Osaka, J."}], "nameIdentifiers": [{"nameIdentifier": "19188", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kumar, Senthil  M."}], "nameIdentifiers": [{"nameIdentifier": "19189", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Toyoda, H."}], "nameIdentifiers": [{"nameIdentifier": "19190", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ishijima, T."}], "nameIdentifiers": [{"nameIdentifier": "19191", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Sugai, H."}], "nameIdentifiers": [{"nameIdentifier": "19192", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Mizutani, T."}], "nameIdentifiers": [{"nameIdentifier": "19193", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-19"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "AppPhysLett_90-172114.pdf", "filesize": [{"value": "74.6 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 74600.0, "url": {"label": "AppPhysLett_90-172114.pdf", "url": "https://nagoya.repo.nii.ac.jp/record/7101/files/AppPhysLett_90-172114.pdf"}, "version_id": "ba25dc32-7c8e-4d44-a2d9-6ef9354dc762"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Role of atomic nitrogen during GaN growth by plasma-assisted molecular beam epitaxy revealed by appearance mass spectrometry", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Role of atomic nitrogen during GaN growth by plasma-assisted molecular beam epitaxy revealed by appearance mass spectrometry"}]}, "item_type_id": "10", "owner": "1", "path": ["320/321/322"], "permalink_uri": "http://hdl.handle.net/2237/8775", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_name_i18n": "\u516c\u958b\u65e5", "attribute_value": "2007-09-25"}, "publish_date": "2007-09-25", "publish_status": "0", "recid": "7101", "relation": {}, "relation_version_is_last": true, "title": ["Role of atomic nitrogen during GaN growth by plasma-assisted molecular beam epitaxy revealed by appearance mass spectrometry"], "weko_shared_id": 3}