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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Carrier generation and transport properties of heavily Nb-doped anatase TiO2 epitaxial films at high temperatures

http://hdl.handle.net/2237/8777
http://hdl.handle.net/2237/8777
dd9fb7f1-1a14-4aac-80fd-83b8267c72fc
名前 / ファイル ライセンス アクション
JourAppPhys_100-96105.pdf JourAppPhys_100-96105.pdf (437.1 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2007-09-25
タイトル
タイトル Carrier generation and transport properties of heavily Nb-doped anatase TiO2 epitaxial films at high temperatures
言語 en
著者 Kurita, Daisuke

× Kurita, Daisuke

WEKO 19198

en Kurita, Daisuke

Search repository
Ohta, Shingo

× Ohta, Shingo

WEKO 19199

en Ohta, Shingo

Search repository
Sugiura, kenji

× Sugiura, kenji

WEKO 19200

en Sugiura, kenji

Search repository
Ohta, Hiromichi

× Ohta, Hiromichi

WEKO 19201

en Ohta, Hiromichi

Search repository
Koumoto, Kunihito

× Koumoto, Kunihito

WEKO 19202

en Koumoto, Kunihito

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 Copyright (2006) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
抄録
内容記述 To compare the intrinsic thermoelectric (TE) properties of heavily Nb-doped TiO2 to those of heavily Nb-doped SrTiO3 [S. Ohta et al., Appl. Phys. Lett. 87, 092108 (2005)], the electrical conductivity (δ), carrier concentration (n_e), Hall mobility (μHall), and Seebeck coefficient (S) of heavily Nb-doped TiO2 (anatase) epitaxial films were measured at high temperatures (300–900 K). The epitaxial films were grown on the (100)-face of LaAlO3 single-crystalline substrates by a pulsed-laser deposition technique at 800 °C. The carrier effective mass (m*) of the anatase TiO2 epitaxial films was ~1m0, which is an order of magnitude smaller than that of Nb-doped SrTiO3 (~10m0). The estimated TE power factor (S^2 δ) of the ~2%-Nb-doped anatase TiO2 film (n_e~5 ×10^20 cm^−3) was ~2.5×10^−4 Wm^−1 K^−2 at 900 K, which is approximately 15% of the 20%-Nb-doped SrTiO3 (1.5×10^−3 Wm^−1 K^−2). The present findings will help establish a future TE material design concept for Ti-based metal oxides.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 American Institute of Physics
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1063/1.2362990
ISSN
収録物識別子タイプ PISSN
収録物識別子 0021-8979
書誌情報 en : JOURNAL OF APPLIED PHYSICS

巻 100, 号 9, p. 096105-096105, 発行日 2006-11-01
フォーマット
application/pdf
著者版フラグ
値 publisher
URI
識別子 http://hdl.handle.net/2237/8777
識別子タイプ HDL
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