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Carrier generation and transport properties of heavily Nb-doped anatase TiO2 epitaxial films at high temperatures
http://hdl.handle.net/2237/8777
http://hdl.handle.net/2237/8777dd9fb7f1-1a14-4aac-80fd-83b8267c72fc
名前 / ファイル | ライセンス | アクション |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2007-09-25 | |||||
タイトル | ||||||
タイトル | Carrier generation and transport properties of heavily Nb-doped anatase TiO2 epitaxial films at high temperatures | |||||
言語 | en | |||||
著者 |
Kurita, Daisuke
× Kurita, Daisuke× Ohta, Shingo× Sugiura, kenji× Ohta, Hiromichi× Koumoto, Kunihito |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | Copyright (2006) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
抄録 | ||||||
内容記述 | To compare the intrinsic thermoelectric (TE) properties of heavily Nb-doped TiO2 to those of heavily Nb-doped SrTiO3 [S. Ohta et al., Appl. Phys. Lett. 87, 092108 (2005)], the electrical conductivity (δ), carrier concentration (n_e), Hall mobility (μHall), and Seebeck coefficient (S) of heavily Nb-doped TiO2 (anatase) epitaxial films were measured at high temperatures (300–900 K). The epitaxial films were grown on the (100)-face of LaAlO3 single-crystalline substrates by a pulsed-laser deposition technique at 800 °C. The carrier effective mass (m*) of the anatase TiO2 epitaxial films was ~1m0, which is an order of magnitude smaller than that of Nb-doped SrTiO3 (~10m0). The estimated TE power factor (S^2 δ) of the ~2%-Nb-doped anatase TiO2 film (n_e~5 ×10^20 cm^−3) was ~2.5×10^−4 Wm^−1 K^−2 at 900 K, which is approximately 15% of the 20%-Nb-doped SrTiO3 (1.5×10^−3 Wm^−1 K^−2). The present findings will help establish a future TE material design concept for Ti-based metal oxides. | |||||
言語 | en | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | American Institute of Physics | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
出版タイプ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1063/1.2362990 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0021-8979 | |||||
書誌情報 |
en : JOURNAL OF APPLIED PHYSICS 巻 100, 号 9, p. 096105-096105, 発行日 2006-11-01 |
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フォーマット | ||||||
application/pdf | ||||||
著者版フラグ | ||||||
値 | publisher | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/8777 | |||||
識別子タイプ | HDL |