Item type |
itemtype_ver1(1) |
公開日 |
2022-01-11 |
タイトル |
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タイトル |
Reduction in operating voltage of AlGaN homojunction tunnel junction deep-UV light-emitting diodes by controlling impurity concentrations |
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言語 |
en |
著者 |
Nagata, Kengo
Makino, Hiroaki
Miwa, Hiroshi
Matsui, Shinichi
Boyama, Shinya
Saito, Yoshiki
Kushimoto, Maki
Honda, Yoshio
Takeuchi, Tetsuya
Amano, Hiroshi
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アクセス権 |
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アクセス権 |
open access |
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アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
権利 |
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言語 |
en |
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権利情報 |
This is the Accepted Manuscript version of an article accepted for publication in [Applied Physics Express]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at [https://doi.org/10.35848/1882-0786/ac0fb6]. |
権利 |
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言語 |
en |
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権利情報 |
“This Accepted Manuscript is available for reuse under a CC BY-NC-ND licence after the 12 month embargo period provided that all the terms of the licence are adhered to” |
内容記述 |
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内容記述 |
We reduced the operating voltage of AlGaN homojunction tunnel junction (TJ) deep-ultraviolet (UV) light-emitting diodes (LEDs) by two approaches: the suppression of carbon incorporation and the doping of a high concentration of silicon in an n^+-AlGaN layer. The AlGaN homojunction TJ deep-UV LEDs had a significantly reduced forward voltage upon suppressing the incorporation of carbon in the n^+-AlGaN layer. The suppression of electron compensation by carbon in nitrogen sites and the doping of a high concentration of silicon in an n^+-AlGaN layer are important for reducing the operating voltage of AlGaN homojunction TJ deep-UV LEDs. |
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言語 |
en |
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内容記述タイプ |
Abstract |
出版者 |
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言語 |
en |
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出版者 |
IOP publishing |
言語 |
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言語 |
eng |
資源タイプ |
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資源タイプresource |
http://purl.org/coar/resource_type/c_6501 |
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タイプ |
journal article |
出版タイプ |
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出版タイプ |
AM |
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出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
関連情報 |
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関連タイプ |
isVersionOf |
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識別子タイプ |
DOI |
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関連識別子 |
https://doi.org/10.35848/1882-0786/ac0fb6 |
収録物識別子 |
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収録物識別子タイプ |
PISSN |
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収録物識別子 |
1882-0778 |
書誌情報 |
en : Applied Physics Express
巻 14,
号 8,
p. 084001,
発行日 2021-08
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ファイル公開日 |
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日付 |
2022-08-01 |
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日付タイプ |
Available |