{"_buckets": {"deposit": "74f18448-710f-4971-93c9-011d87932bee"}, "_deposit": {"id": "21366", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "21366"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00021366", "sets": ["322"]}, "author_link": ["61713", "61714", "61715", "61716", "61717", "61718", "61719", "61720"], "control_number": "21366", "item_10_alternative_title_19": {"attribute_name": "その他のタイトル", "attribute_value_mlt": [{"subitem_alternative_title": "Fabrication of AlGaN/GaN MOSFETs with Al2O3 gate oxide deposited by atomic layer deposition", "subitem_alternative_title_language": "en"}]}, "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2011-05", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "46", "bibliographicPageEnd": "190", "bibliographicPageStart": "185", "bibliographicVolumeNumber": "111", "bibliographic_titles": [{"bibliographic_title": "電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス", "bibliographic_titleLang": "ja"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "Al_2O_3/AlGaN/GaN MOSFETのFET特性改善のため、Al_2O_3成膜前の前処理として(NH_4)_2S(硫化アンモニウム)処理を検討した。まず初めに、Al_2O_3/n-GaN MOSダイオードを用いて、(NH_4)_2S処理の効果を検討した所、Al_2O_3成膜前に(NH_4)_2S処理を行うことでC-Vカーブの傾きが(NH_4)_2S処理なしに比べて急峻になり、界面準位密度も低減した。次に本(NH_4)_2S処理をAl_2O_3/AlGaN/GaN MOSFETに適用したところ、I_D,g_m-V_\u003cGS\u003e特性におけるヒステリシスが減少し、また大きなゲート電圧におけるI_Dの上詰まりも改善した。これらの結果は硫化アンモニウム処理により、Al_2O_3/AlGaN界面の界面準位密度が低減したことを示唆している。またさらなる界面品質の向上を目指して、C-V測定後アニールを行ったところ、C-Vカーブの立ち上がりが正側にシフトし、界面準位密度も低減した。", "subitem_description_language": "ja", "subitem_description_type": "Abstract"}, {"subitem_description": "We have introduced (NH_4)_2S surface treatments before the deposition of the Al_2O_3 gate oxide to improve the electrical properties of Al_2O_3/AlGaN/GaN MOSFETs. Firstly, the effect of (NH_4)_2S surface treatment was studied using Al_2O_3/GaN MOS diodes. The slope in the C-V curve of the MOS diodes with (NH_4)_2S surface treatments was steeper than that of the devices without (NH_4)_2S. In addition, Al_2O_3/GaN interface trap density was decreased by (NH_4)_2S surface treatments. The hysteresis of the Al_2O_3/AlGaN/GaN MOSFET with (NH_4)_2S surface treatments in I_D-V_\u003cGS\u003e and g_m-V_\u003cGS\u003e characteristics was smaller than that of the device without (NH_4)_2S surface treatments. In addition, the current saturation in I_D-V_\u003cGS\u003e characteristics at a large gate voltage is relaxed. These results indicate that Al_2O_3/AlGaN interface trap density is decreased by (NH_4)_2S surface treatments. The annealing of the MOS diodes was shown to be effective in improving the interface quality of the MOS diodes.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_description_5": {"attribute_name": "内容記述", "attribute_value_mlt": [{"subitem_description": "IEICE Technical Report;ED2011-36, IEICE Technical Report;CPM2011-43, IEICE Technical Report;SDM2011-49", "subitem_description_language": "en", "subitem_description_type": "Other"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/23510"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "一般社団法人電子情報通信学会", "subitem_publisher_language": "ja"}]}, "item_10_relation_43": {"attribute_name": "関連情報", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "http://ci.nii.ac.jp/naid/110008726168/", "subitem_relation_type_select": "URI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "(c)一般社団法人電子情報通信学会 本文データは学協会の許諾に基づきCiNiiから複製したものである", "subitem_rights_language": "ja"}]}, "item_10_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0913-5685", "subitem_source_identifier_type": "PISSN"}]}, "item_1615787544753": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "宮崎, 英志", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "61713", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "合田, 祐司", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "61714", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "岸本, 茂", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "61715", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "水谷, 孝", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "61716", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Miyazaki, Eiji", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "61717", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Gouda, Takeshi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "61718", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kishimoto, Shigeru", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "61719", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Mizutani, Takashi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "61720", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-21"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "110008726168.pdf", "filesize": [{"value": "758.1 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 758100.0, "url": {"label": "110008726168.pdf", "objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/21366/files/110008726168.pdf"}, "version_id": "ebbadc70-70dd-4f44-9390-0231893f2e50"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "Al203/AlGaN/GaN MOSFET", "subitem_subject_scheme": "Other"}, {"subitem_subject": "硫化アンモニウム", "subitem_subject_scheme": "Other"}, {"subitem_subject": "界面準位密度", "subitem_subject_scheme": "Other"}, {"subitem_subject": "(NH4)2S", "subitem_subject_scheme": "Other"}, {"subitem_subject": "interface trap density", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "jpn"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "原子層堆積Al2O3をゲート絶縁膜とするAlGaN/GaN MOSFETの作製と評価", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "原子層堆積Al2O3をゲート絶縁膜とするAlGaN/GaN MOSFETの作製と評価", "subitem_title_language": "ja"}]}, "item_type_id": "10", "owner": "1", "path": ["322"], "permalink_uri": "http://hdl.handle.net/2237/23510", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2016-02-22"}, "publish_date": "2016-02-22", "publish_status": "0", "recid": "21366", "relation": {}, "relation_version_is_last": true, "title": ["原子層堆積Al2O3をゲート絶縁膜とするAlGaN/GaN MOSFETの作製と評価"], "weko_shared_id": -1}