{"_buckets": {"deposit": "550b459e-cd20-420a-bee4-a881de9b0d7b"}, "_deposit": {"id": "21366", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "21366"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00021366"}, "item_10_alternative_title_19": {"attribute_name": "\u305d\u306e\u4ed6\u306e\u8a00\u8a9e\u306e\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_alternative_title": "Fabrication of AlGaN/GaN MOSFETs with Al2O3 gate oxide deposited by atomic layer deposition"}]}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2011-05", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "46", "bibliographicPageEnd": "190", "bibliographicPageStart": "185", "bibliographicVolumeNumber": "111", "bibliographic_titles": [{"bibliographic_title": "\u96fb\u5b50\u60c5\u5831\u901a\u4fe1\u5b66\u4f1a\u6280\u8853\u7814\u7a76\u5831\u544a. SDM, \u30b7\u30ea\u30b3\u30f3\u6750\u6599\u30fb\u30c7\u30d0\u30a4\u30b9"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "Al_2O_3/AlGaN/GaN MOSFET\u306eFET\u7279\u6027\u6539\u5584\u306e\u305f\u3081\u3001Al_2O_3\u6210\u819c\u524d\u306e\u524d\u51e6\u7406\u3068\u3057\u3066(NH_4)_2S(\u786b\u5316\u30a2\u30f3\u30e2\u30cb\u30a6\u30e0)\u51e6\u7406\u3092\u691c\u8a0e\u3057\u305f\u3002\u307e\u305a\u521d\u3081\u306b\u3001Al_2O_3/n-GaN MOS\u30c0\u30a4\u30aa\u30fc\u30c9\u3092\u7528\u3044\u3066\u3001(NH_4)_2S\u51e6\u7406\u306e\u52b9\u679c\u3092\u691c\u8a0e\u3057\u305f\u6240\u3001Al_2O_3\u6210\u819c\u524d\u306b(NH_4)_2S\u51e6\u7406\u3092\u884c\u3046\u3053\u3068\u3067C-V\u30ab\u30fc\u30d6\u306e\u50be\u304d\u304c(NH_4)_2S\u51e6\u7406\u306a\u3057\u306b\u6bd4\u3079\u3066\u6025\u5cfb\u306b\u306a\u308a\u3001\u754c\u9762\u6e96\u4f4d\u5bc6\u5ea6\u3082\u4f4e\u6e1b\u3057\u305f\u3002\u6b21\u306b\u672c(NH_4)_2S\u51e6\u7406\u3092Al_2O_3/AlGaN/GaN MOSFET\u306b\u9069\u7528\u3057\u305f\u3068\u3053\u308d\u3001I_D,g_m-V_\u003cGS\u003e\u7279\u6027\u306b\u304a\u3051\u308b\u30d2\u30b9\u30c6\u30ea\u30b7\u30b9\u304c\u6e1b\u5c11\u3057\u3001\u307e\u305f\u5927\u304d\u306a\u30b2\u30fc\u30c8\u96fb\u5727\u306b\u304a\u3051\u308bI_D\u306e\u4e0a\u8a70\u307e\u308a\u3082\u6539\u5584\u3057\u305f\u3002\u3053\u308c\u3089\u306e\u7d50\u679c\u306f\u786b\u5316\u30a2\u30f3\u30e2\u30cb\u30a6\u30e0\u51e6\u7406\u306b\u3088\u308a\u3001Al_2O_3/AlGaN\u754c\u9762\u306e\u754c\u9762\u6e96\u4f4d\u5bc6\u5ea6\u304c\u4f4e\u6e1b\u3057\u305f\u3053\u3068\u3092\u793a\u5506\u3057\u3066\u3044\u308b\u3002\u307e\u305f\u3055\u3089\u306a\u308b\u754c\u9762\u54c1\u8cea\u306e\u5411\u4e0a\u3092\u76ee\u6307\u3057\u3066\u3001C-V\u6e2c\u5b9a\u5f8c\u30a2\u30cb\u30fc\u30eb\u3092\u884c\u3063\u305f\u3068\u3053\u308d\u3001C-V\u30ab\u30fc\u30d6\u306e\u7acb\u3061\u4e0a\u304c\u308a\u304c\u6b63\u5074\u306b\u30b7\u30d5\u30c8\u3057\u3001\u754c\u9762\u6e96\u4f4d\u5bc6\u5ea6\u3082\u4f4e\u6e1b\u3057\u305f\u3002We have introduced (NH_4)_2S surface treatments before the deposition of the Al_2O_3 gate oxide to improve the electrical properties of Al_2O_3/AlGaN/GaN MOSFETs. Firstly, the effect of (NH_4)_2S surface treatment was studied using Al_2O_3/GaN MOS diodes. The slope in the C-V curve of the MOS diodes with (NH_4)_2S surface treatments was steeper than that of the devices without (NH_4)_2S. In addition, Al_2O_3/GaN interface trap density was decreased by (NH_4)_2S surface treatments. The hysteresis of the Al_2O_3/AlGaN/GaN MOSFET with (NH_4)_2S surface treatments in I_D-V_\u003cGS\u003e and g_m-V_\u003cGS\u003e characteristics was smaller than that of the device without (NH_4)_2S surface treatments. In addition, the current saturation in I_D-V_\u003cGS\u003e characteristics at a large gate voltage is relaxed. These results indicate that Al_2O_3/AlGaN interface trap density is decreased by (NH_4)_2S surface treatments. The annealing of the MOS diodes was shown to be effective in improving the interface quality of the MOS diodes.", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "URI", "subitem_identifier_uri": "http://ci.nii.ac.jp/naid/110008726168/"}, {"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/23510"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "\u4e00\u822c\u793e\u56e3\u6cd5\u4eba\u96fb\u5b50\u60c5\u5831\u901a\u4fe1\u5b66\u4f1a"}]}, "item_10_relation_40": {"attribute_name": "\u30b7\u30ea\u30fc\u30ba", "attribute_value_mlt": [{"subitem_relation_name": [{"subitem_relation_name_text": "IEICE Technical Report;ED2011-36"}]}, {"subitem_relation_name": [{"subitem_relation_name_text": "IEICE Technical Report;CPM2011-43"}]}, {"subitem_relation_name": [{"subitem_relation_name_text": "IEICE 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