{"_buckets": {"deposit": "812ab5ea-dd5c-45f8-8d30-2392e660d82d"}, "_deposit": {"id": "23089", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "23089"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00023089"}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2016-04", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "4S", "bibliographicPageEnd": "04EJ11", "bibliographicPageStart": "04EJ11", "bibliographicVolumeNumber": "55", "bibliographic_titles": [{"bibliographic_title": "Japanese Journal of Applied Physics"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "We have investigated the structural and electrical properties of n-type doped Si1\u2212 x Ge x epitaxial layers (x = 24\u201326%) grown by chemical vapor deposition with conventional [SiH2Cl2 (DCS)/GeH4] and high-order (Si2H6/Ge2H6) precursor combinations. X-ray diffraction, atomic force microscopy, and deep-level transient spectroscopy (DLTS) measurements were performed for characterization. The crystalline properties and surface morphology of the Si1\u2212 x Ge x layer with Si2H6/Ge2H6 grown at temperatures as low as 550 \u00b0C show good structural quality similar to that with DCS/GeH4 grown at 615 \u00b0C. On the other hand, in terms of electrical properties, the DLTS measurement reveals the existence of vacancy-related complexes in the as-grown layer with Si2H6/Ge2H6. We found that post-deposition annealing at 200 \u00b0C for the Si1\u2212 x Ge x epitaxial layer is effective for annihilating vacancy-related defects with densities down to as low as that of conventional precursors.", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "DOI", "subitem_identifier_uri": "http://dx.doi.org/10.7567/JJAP.55.04EJ11"}, {"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/25279"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "IOP publishing"}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "\u00a9 2016 The Japan Society of Applied Physics"}]}, "item_10_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0021-4922", "subitem_source_identifier_type": "ISSN"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Ike, Shinichi"}], "nameIdentifiers": [{"nameIdentifier": "68432", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Simoen, Eddy"}], "nameIdentifiers": [{"nameIdentifier": "68433", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Shimura, Yosuke"}], "nameIdentifiers": [{"nameIdentifier": "68434", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hikavyy, Andriy"}], "nameIdentifiers": [{"nameIdentifier": "68435", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Vandervorst, Wilfried"}], "nameIdentifiers": [{"nameIdentifier": "68436", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Loo, Roger"}], "nameIdentifiers": [{"nameIdentifier": "68437", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Takeuchi, Wakana"}], "nameIdentifiers": [{"nameIdentifier": "68438", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Nakatsuka, Osamu"}], "nameIdentifiers": [{"nameIdentifier": "68439", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Zaima, Shigeaki"}], "nameIdentifiers": [{"nameIdentifier": "68440", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2017-04-01"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "JJAP_Ike_Merged_SS15181.pdf", "filesize": [{"value": "969.4 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 969400.0, "url": {"label": "JJAP_Ike_Merged_SS15181.pdf \u30d5\u30a1\u30a4\u30eb\u516c\u958b\uff1a2017/04/01", "url": "https://nagoya.repo.nii.ac.jp/record/23089/files/JJAP_Ike_Merged_SS15181.pdf"}, "version_id": "0ed233f2-a3f2-45b9-a3a9-48d0879d39e7"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects"}]}, "item_type_id": "10", "owner": "1", "path": ["320/321/322"], "permalink_uri": "http://hdl.handle.net/2237/25279", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_name_i18n": "\u516c\u958b\u65e5", "attribute_value": "2016-12-21"}, "publish_date": "2016-12-21", "publish_status": "0", "recid": "23089", "relation": {}, "relation_version_is_last": true, "title": ["Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects"], "weko_shared_id": null}