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Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects
http://hdl.handle.net/2237/25279
http://hdl.handle.net/2237/252791b06396d-9495-495d-8526-af39d6a3afca
| 名前 / ファイル | ライセンス | アクション |
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JJAP_Ike_Merged_SS15181.pdf ファイル公開：2017/04/01 (969.4 kB)
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| アイテムタイプ | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2016-12-21 | |||||
| タイトル | ||||||
| タイトル | Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects | |||||
| 言語 | en | |||||
| 著者 |
Ike, Shinichi
× Ike, Shinichi× Simoen, Eddy× Shimura, Yosuke× Hikavyy, Andriy× Vandervorst, Wilfried× Loo, Roger× Takeuchi, Wakana× Nakatsuka, Osamu× Zaima, Shigeaki |
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| アクセス権 | ||||||
| アクセス権 | open access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
| 権利 | ||||||
| 権利情報 | © 2016 The Japan Society of Applied Physics | |||||
| 言語 | en | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | We have investigated the structural and electrical properties of n-type doped Si1− x Ge x epitaxial layers (x = 24–26%) grown by chemical vapor deposition with conventional [SiH2Cl2 (DCS)/GeH4] and high-order (Si2H6/Ge2H6) precursor combinations. X-ray diffraction, atomic force microscopy, and deep-level transient spectroscopy (DLTS) measurements were performed for characterization. The crystalline properties and surface morphology of the Si1− x Ge x layer with Si2H6/Ge2H6 grown at temperatures as low as 550 °C show good structural quality similar to that with DCS/GeH4 grown at 615 °C. On the other hand, in terms of electrical properties, the DLTS measurement reveals the existence of vacancy-related complexes in the as-grown layer with Si2H6/Ge2H6. We found that post-deposition annealing at 200 °C for the Si1− x Ge x epitaxial layer is effective for annihilating vacancy-related defects with densities down to as low as that of conventional precursors. | |||||
| 言語 | en | |||||
| 出版者 | ||||||
| 出版者 | IOP publishing | |||||
| 言語 | en | |||||
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| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
| タイプ | journal article | |||||
| 出版タイプ | ||||||
| 出版タイプ | AM | |||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
| DOI | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.7567/JJAP.55.04EJ11 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 0021-4922 | |||||
| 書誌情報 |
en : Japanese Journal of Applied Physics 巻 55, 号 4S, p. 04EJ11-04EJ11, 発行日 2016-04 |
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| 著者版フラグ | ||||||
| 値 | author | |||||
| URI | ||||||
| 識別子 | http://dx.doi.org/10.7567/JJAP.55.04EJ11 | |||||
| 識別子タイプ | DOI | |||||
| URI | ||||||
| 識別子 | http://hdl.handle.net/2237/25279 | |||||
| 識別子タイプ | HDL | |||||
