{"_buckets": {"deposit": "812ab5ea-dd5c-45f8-8d30-2392e660d82d"}, "_deposit": {"id": "23089", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "23089"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00023089", "sets": ["322"]}, "author_link": ["68432", "68433", "68434", "68435", "68436", "68437", "68438", "68439", "68440"], "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2016-04", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "4S", "bibliographicPageEnd": "04EJ11", "bibliographicPageStart": "04EJ11", "bibliographicVolumeNumber": "55", "bibliographic_titles": [{"bibliographic_title": "Japanese Journal of Applied Physics", "bibliographic_titleLang": "en"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "We have investigated the structural and electrical properties of n-type doped Si1− x Ge x epitaxial layers (x = 24–26%) grown by chemical vapor deposition with conventional [SiH2Cl2 (DCS)/GeH4] and high-order (Si2H6/Ge2H6) precursor combinations. X-ray diffraction, atomic force microscopy, and deep-level transient spectroscopy (DLTS) measurements were performed for characterization. The crystalline properties and surface morphology of the Si1− x Ge x layer with Si2H6/Ge2H6 grown at temperatures as low as 550 °C show good structural quality similar to that with DCS/GeH4 grown at 615 °C. On the other hand, in terms of electrical properties, the DLTS measurement reveals the existence of vacancy-related complexes in the as-grown layer with Si2H6/Ge2H6. We found that post-deposition annealing at 200 °C for the Si1− x Ge x epitaxial layer is effective for annihilating vacancy-related defects with densities down to as low as that of conventional precursors.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "DOI", "subitem_identifier_uri": "http://dx.doi.org/10.7567/JJAP.55.04EJ11"}, {"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/25279"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "IOP publishing", "subitem_publisher_language": "en"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.7567/JJAP.55.04EJ11", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "© 2016 The Japan Society of Applied Physics", "subitem_rights_language": "en"}]}, "item_10_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0021-4922", "subitem_source_identifier_type": "PISSN"}]}, "item_1615787544753": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_ab4af688f83e57aa", "subitem_version_type": "AM"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Ike, Shinichi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "68432", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Simoen, Eddy", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "68433", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Shimura, Yosuke", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "68434", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hikavyy, Andriy", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "68435", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Vandervorst, Wilfried", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "68436", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Loo, Roger", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "68437", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Takeuchi, Wakana", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "68438", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Nakatsuka, Osamu", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "68439", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Zaima, Shigeaki", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "68440", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2017-04-01"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "JJAP_Ike_Merged_SS15181.pdf", "filesize": [{"value": "969.4 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 969400.0, "url": {"label": "JJAP_Ike_Merged_SS15181.pdf ファイル公開：2017/04/01", "objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/23089/files/JJAP_Ike_Merged_SS15181.pdf"}, "version_id": "0ed233f2-a3f2-45b9-a3a9-48d0879d39e7"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects", "subitem_title_language": "en"}]}, "item_type_id": "10", "owner": "1", "path": ["322"], "permalink_uri": "http://hdl.handle.net/2237/25279", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2016-12-21"}, "publish_date": "2016-12-21", "publish_status": "0", "recid": "23089", "relation": {}, "relation_version_is_last": true, "title": ["Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects"], "weko_shared_id": -1}