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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects

http://hdl.handle.net/2237/25279
http://hdl.handle.net/2237/25279
1b06396d-9495-495d-8526-af39d6a3afca
名前 / ファイル ライセンス アクション
JJAP_Ike_Merged_SS15181.pdf JJAP_Ike_Merged_SS15181.pdf ファイル公開:2017/04/01 (969.4 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2016-12-21
タイトル
タイトル Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects
言語 en
著者 Ike, Shinichi

× Ike, Shinichi

WEKO 68432

en Ike, Shinichi

Search repository
Simoen, Eddy

× Simoen, Eddy

WEKO 68433

en Simoen, Eddy

Search repository
Shimura, Yosuke

× Shimura, Yosuke

WEKO 68434

en Shimura, Yosuke

Search repository
Hikavyy, Andriy

× Hikavyy, Andriy

WEKO 68435

en Hikavyy, Andriy

Search repository
Vandervorst, Wilfried

× Vandervorst, Wilfried

WEKO 68436

en Vandervorst, Wilfried

Search repository
Loo, Roger

× Loo, Roger

WEKO 68437

en Loo, Roger

Search repository
Takeuchi, Wakana

× Takeuchi, Wakana

WEKO 68438

en Takeuchi, Wakana

Search repository
Nakatsuka, Osamu

× Nakatsuka, Osamu

WEKO 68439

en Nakatsuka, Osamu

Search repository
Zaima, Shigeaki

× Zaima, Shigeaki

WEKO 68440

en Zaima, Shigeaki

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 © 2016 The Japan Society of Applied Physics
抄録
内容記述 We have investigated the structural and electrical properties of n-type doped Si1− x Ge x epitaxial layers (x = 24–26%) grown by chemical vapor deposition with conventional [SiH2Cl2 (DCS)/GeH4] and high-order (Si2H6/Ge2H6) precursor combinations. X-ray diffraction, atomic force microscopy, and deep-level transient spectroscopy (DLTS) measurements were performed for characterization. The crystalline properties and surface morphology of the Si1− x Ge x layer with Si2H6/Ge2H6 grown at temperatures as low as 550 °C show good structural quality similar to that with DCS/GeH4 grown at 615 °C. On the other hand, in terms of electrical properties, the DLTS measurement reveals the existence of vacancy-related complexes in the as-grown layer with Si2H6/Ge2H6. We found that post-deposition annealing at 200 °C for the Si1− x Ge x epitaxial layer is effective for annihilating vacancy-related defects with densities down to as low as that of conventional precursors.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 IOP publishing
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.7567/JJAP.55.04EJ11
ISSN
収録物識別子タイプ PISSN
収録物識別子 0021-4922
書誌情報 en : Japanese Journal of Applied Physics

巻 55, 号 4S, p. 04EJ11-04EJ11, 発行日 2016-04
著者版フラグ
値 author
URI
識別子 http://dx.doi.org/10.7567/JJAP.55.04EJ11
識別子タイプ DOI
URI
識別子 http://hdl.handle.net/2237/25279
識別子タイプ HDL
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