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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

A simple gate driver design for GaN-based switching devices with improved surge voltage and switching loss at 1 MHz operation

http://hdl.handle.net/2237/00033502
http://hdl.handle.net/2237/00033502
84a2201c-d929-4ec9-826c-185a246d0745
名前 / ファイル ライセンス アクション
JJAP_sourcefile_Jodo.pdf JJAP_sourcefile_Jodo (911.3 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2021-02-09
タイトル
タイトル A simple gate driver design for GaN-based switching devices with improved surge voltage and switching loss at 1 MHz operation
言語 en
著者 Jodo, Shota

× Jodo, Shota

WEKO 103370

en Jodo, Shota

Search repository
Iwaki, Toshihiro

× Iwaki, Toshihiro

WEKO 103371

en Iwaki, Toshihiro

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Uchiyama, Kosuke

× Uchiyama, Kosuke

WEKO 103372

en Uchiyama, Kosuke

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Islam, Md. Zahidul

× Islam, Md. Zahidul

WEKO 103373

en Islam, Md. Zahidul

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Kataoka, Kensuke

× Kataoka, Kensuke

WEKO 103374

en Kataoka, Kensuke

Search repository
Hayakasa, Yuki

× Hayakasa, Yuki

WEKO 103375

en Hayakasa, Yuki

Search repository
Imaoka, Jun

× Imaoka, Jun

WEKO 103376

en Imaoka, Jun

Search repository
Yamamoto, Masayoshi

× Yamamoto, Masayoshi

WEKO 103377

en Yamamoto, Masayoshi

Search repository
Niitsu, Kiichi

× Niitsu, Kiichi

WEKO 103378

en Niitsu, Kiichi

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 This is the Accepted Manuscript version of an article accepted for publication in [Japanese Journal of Applied Physics].IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at [10.35848/1347-4065/abbdc7]
権利
言語 en
権利情報 “This Accepted Manuscript is available for reuse under a CC BY-NC-ND licence after the 12 month embargo period provided that all the terms of the licence are adhered to”
抄録
内容記述 In power electronics, the impedance of reactance components increases proportionally with frequency; therefore, the sizes of reactance components can be reduced by increasing the switching frequency. Gallium nitride (GaN)-based devices have received significant attention in high-frequency applications because the figure-of-merit of GaN is superior to that of silicon (Si). However, for high-frequency operation, a trade-off relationship between the surge voltage induced by parasitic inductances, and the switching loss becomes significant. Therefore, in this study, we propose a gate driver that improves the trade-off relationship. This gate driver was obtained via the addition of simple logic circuits and capacitors to a conventional gate driver. The effectiveness of our proposed circuit was verified via SPICE simulations with Cadence Spectre using 180 nm CMOS technology. The simulation results show that by operating at 1 MHz, this circuit can help reduce the surge voltage by 12.2% and the switching loss by 14.3%.
言語 en
内容記述タイプ Abstract
内容記述
内容記述 ファイル公開:2022-01-01
言語 ja
内容記述タイプ Other
出版者
言語 en
出版者 IOP publishing
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.35848/1347-4065/abbdc7
ISSN(print)
収録物識別子タイプ PISSN
収録物識別子 0021-4922
書誌情報 en : Japanese Journal of Applied Physics

巻 60, 号 SA, p. SAAD02, 発行日 2021-01
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