{"_buckets": {"deposit": "264ba2da-26e1-4945-ab06-f593eb6b7e9e"}, "_deposit": {"id": "31322", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "31322"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00031322"}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2021-01", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "SA", "bibliographicPageStart": "SAAD02", "bibliographicVolumeNumber": "60", "bibliographic_titles": [{"bibliographic_title": "Japanese Journal of Applied Physics"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "In power electronics, the impedance of reactance components increases proportionally with frequency; therefore, the sizes of reactance components can be reduced by increasing the switching frequency. Gallium nitride (GaN)-based devices have received significant attention in high-frequency applications because the figure-of-merit of GaN is superior to that of silicon (Si). However, for high-frequency operation, a trade-off relationship between the surge voltage induced by parasitic inductances, and the switching loss becomes significant. Therefore, in this study, we propose a gate driver that improves the trade-off relationship. This gate driver was obtained via the addition of simple logic circuits and capacitors to a conventional gate driver. The effectiveness of our proposed circuit was verified via SPICE simulations with Cadence Spectre using 180 nm CMOS technology. The simulation results show that by operating at 1 MHz, this circuit can help reduce the surge voltage by 12.2% and the switching loss by 14.3%.", "subitem_description_type": "Abstract"}]}, "item_10_description_5": {"attribute_name": "\u5185\u5bb9\u8a18\u8ff0", "attribute_value_mlt": [{"subitem_description": "\u30d5\u30a1\u30a4\u30eb\u516c\u958b\uff1a2022-01-01", "subitem_description_type": "Other"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "IOP publishing"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.35848/1347-4065/abbdc7", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "This is the Accepted Manuscript version of an article accepted for publication in [Japanese Journal of Applied Physics].IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it.\u202fThe Version of Record is available online at [10.35848/1347-4065/abbdc7]"}, {"subitem_rights": "\u201cThis Accepted Manuscript is available for reuse under a CC BY-NC-ND licence after the 12 month embargo period provided that all the terms of the licence are adhered to\u201d"}]}, "item_10_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_10_source_id_61": {"attribute_name": "ISSN\uff08print\uff09", "attribute_value_mlt": [{"subitem_source_identifier": "0021-4922", "subitem_source_identifier_type": "ISSN"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Jodo, Shota"}], "nameIdentifiers": [{"nameIdentifier": "103370", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Iwaki, Toshihiro"}], "nameIdentifiers": [{"nameIdentifier": "103371", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Uchiyama, Kosuke"}], "nameIdentifiers": [{"nameIdentifier": "103372", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Islam, Md. Zahidul"}], "nameIdentifiers": [{"nameIdentifier": "103373", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kataoka, Kensuke"}], "nameIdentifiers": [{"nameIdentifier": "103374", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hayakasa, Yuki"}], "nameIdentifiers": [{"nameIdentifier": "103375", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Imaoka, Jun"}], "nameIdentifiers": [{"nameIdentifier": "103376", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yamamoto, Masayoshi"}], "nameIdentifiers": [{"nameIdentifier": "103377", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Niitsu, Kiichi"}], "nameIdentifiers": [{"nameIdentifier": "103378", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2022-01-01"}], "displaytype": "detail", "download_preview_message": "Download / Preview is available from 2022/1/1.", "file_order": 0, "filename": "JJAP_sourcefile_Jodo.pdf", "filesize": [{"value": "911.3 kB"}], "format": "application/pdf", "future_date_message": "Download is available from 2022/1/1.", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 911300.0, "url": {"label": "JJAP_sourcefile_Jodo", "url": "https://nagoya.repo.nii.ac.jp/record/31322/files/JJAP_sourcefile_Jodo.pdf"}, "version_id": "3efd40a7-f2ef-4bfa-8cba-32137bcf7049"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "A simple gate driver design for GaN-based switching devices with improved surge voltage and switching loss at 1 MHz operation", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "A simple gate driver design for GaN-based switching devices with improved surge voltage and switching loss at 1 MHz operation"}]}, "item_type_id": "10", "owner": "1", "path": ["320/321/322"], "permalink_uri": "http://hdl.handle.net/2237/00033502", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_name_i18n": "\u516c\u958b\u65e5", "attribute_value": "2021-02-09"}, "publish_date": "2021-02-09", "publish_status": "0", "recid": "31322", "relation": {}, "relation_version_is_last": true, "title": ["A simple gate driver design for GaN-based switching devices with improved surge voltage and switching loss at 1 MHz operation"], "weko_shared_id": null}